A -- WIDE BANDGAP SEMICONDUCTOR TECHNOLOGY INITIATIVE

Notice Date

August 21, 2001

Contracting Office

Other Defense Agencies, Defense Advanced Research Projects Agency, Contracts Management Office, 3701 North Fairfax Drive, Arlington, VA, 22203-1714

ZIP Code

22203-1714

Solicitation Number

BAA01-35

Response Due

December 3, 2001

Point of Contact

Edgar Martinez, DARPA PM, Phone 703-696-2206, Fax 703-696-2206, Email none -- Daniel Radack, DARPA PM, Phone 703-696-2206, Fax 703-696-2206, Email none

Description

DARPA is soliciting innovative proposals for the development of wide bandgap semiconductor materials and devices that enable revolutionary concepts for radio frequency (RF) systems and novel approaches for high power electrical control and conversion. Specifically excluded are research activities that primarily result in evolutionary improvements to the existing state of practice. For the purposes of this solicitation, wide bandgap semiconductors (WBGS) are defined as semiconductor materials with bandgaps greater than 2.0 electron volts, including Silicon Carbide (SiC), Gallium Nitride (GaN), and any III-Nitride alloys. This new initiative consists of two major thrust areas: Thrust I: RF/Microwave/Millimeter-wave Technology; Thrust II: High Power Conversion and Distribution Technology. Both thrust areas intend to pursue complementary work on WBGS materials and devices. Proposals are sought for each thrust area and further detailed information regarding each thrust is contained in the descriptions below. Where applicable, offerors should indicate technical work that is common to both thrust areas. In addition, when offerors are submitting proposals to both thrust areas, there must be a clear identification of any portions of work that have substantial overlap. Teaming is strongly encouraged, whenever it make technical sense, to ensure success and rapid transition from the research laboratory to system insertion. The viability of the proposed teaming arrangements should be clearly explained in both the proposal abstracts and full proposals with emphasis placed on integrated approaches (i.e. materials, device technology, electronic enclosures, and system integration). Teaming between industrial organizations, universities, and/or federal and national laboratories with complementary areas of expertise is also encouraged. Innovative proposals from individuals or small groups will also be considered under this initiative. A Web site- https://www.davincinetbook.com/wbgs/- has been established to facilitate formation of teaming arrangements between interested parties. Specific content, communications, networking, and team formation are the sole responsibility of the participants. Neither DARPA nor the Department of Defense (DoD) endorses the destination Web site or the information and organizations contained therein, nor does DARPA or the DoD exercise any responsibility at the destination. This Web site is provided consistent with the stated purpose of this BAA. THRUST AREA I: RF/MICROWAVE/MILLIMETER-WAVE TECHNOLOGY- DARPA Technical Point-of-Contact: Dr. Edgar J. Martinez, (703) 696-7436. The objective of this thrust area is to enable new analog/RF, microwave and millimeter-wave frequency applications and capabilities through the development and exploitation of the material, device, and circuit properties of WBGS. This thrust area is divided into four phases: Phase 0-Concept Study; Phase I-WBGS Materials Development; Phase II-Device and Circuit Technologies; Phase III-WBGS Monolithic Microwave/Millimeter-wave Integrated Circuits (MMIC) Concurrent Engineering Demonstrations. This BAA is soliciting research proposals in response to Phase 0 (Concept Study) and Phase I (WBGS Material Development) objectives. Proposals for Phase II (Device and Circuit Technologies) and Phase III (WBGS MMIC Concurrent Engineering Demonstrations) will be requested through future BAAs. Phase 0 and Phase I efforts have been designed with the intent of providing a strong foundation, which subsequent program phases can be built upon. The decision of whether or not to proceed with the subsequent phases of this initiative will depend largely on the availability of funds, the payoffs identified in Phase 0, and the progress and success achieved under the Phase I efforts. The proposed research should concentrate on at least one of the following technical areas: (a) technology application and system concept studies, (b) development of large area (> 100 mm) semi-insulating silicon carbide (SiC) substrate technology, (c) development of large area (>100 mm), semi-insulating alternative substrate technology, (d) development of epitaxial material technologies, and (e) optimization of material technologies by correlating material advances with device performance. Any one, or combination of two or more areas of interest may be addressed in a single proposal to this Major Thrust Area. Proposed research should investigate innovative technical approaches that enable revolutionary advances in RF/microwave/millimeter-wave technology. Proposing organizations should include a detailed technical work plan, broken out by year, that clearly identifies the expected major challenges with proposed technical metrics to gauge progress (measurable milestones should occur every 12 to 18 months after start of effort). Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. Additional information on these technology areas is provided in the Areas of Interest section of the BAA 01-35 Proposer Information Pamphlet referenced below. THRUST AREA 2: HIGH POWER ELECTRONICS- DARPA Technical Point-of-Contact: Dr. Daniel J. Radack, (703) 696-2216. DARPA is interested in receiving innovative research proposals in the area of high-power solid-state electronics in response to a critical military need for switching devices and integrated circuits that can meet the high-current, high-voltage, and speed requirements of electric components and sub-systems in emerging military applications. DARPA is mainly interested in power electronics technologies for mega-watt (1E6) scale applications. Such applications include efficient compact motor controllers and power distribution in future hybrid-electric combat vehicles, efficient high power, high frequency controllers and converters for naval ship propulsion, and applications in electric aircraft. A leading candidate semiconductor material for high power devices and circuits is SiC in the 4H polytype, but other wide-bandgap semiconductors will be considered as well for compelling power devices. The proposed research should concentrate on at least one of the following technical areas, in descending order or importance for this offering: (1) high-power semiconductor materials and processes, (2) high-power device structures, or (3) high power integrated power circuit technology. Any one, two, or all three areas of interest may be addressed in a single proposal to this Major Thrust Area. Proposed research should investigate innovative technical approaches that enable revolutionary advances in high-power electronic technology. Proposing organizations should include a detailed technical work plan, broken out by major task and by year, that clearly identifies the expected major challenges with proposed technical metrics to gauge progress (measurable milestones should occur every 12 to 18 months after start of effort). Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. Additional information on these technology areas is provided in the Areas of Interest section of the BAA 01-35 Proposer Information Pamphlet referenced below. PROGRAM SCOPE: Multiple awards are expected to be made during the first half of the calendar year 2002. Collaborative efforts/teaming are encouraged. Cost sharing is not required and is not an evaluation criterion, but is encouraged where there is a reasonable probability of a potential commercial application related to the proposed research and development effort. The technical POC for this effort is Dr. Edgar J. Martinez, or Dr. Daniel J. Radack, fax: (703) 696-2206, electronic mail: BAA01-35@darpa.mil. GENERAL INFORMATION: Proposers must obtain a pamphlet entitled: BAA 01-35, Wide Bandgap Semiconductor Technology Initiative, Proposer Information Pamphlet, which provides further information on the technical scope of this initiative, the submission, evaluation, and funding processes, proposal abstract formats, proposal formats, and other general information. This pamphlet may be obtained from the World Wide Web (WWW) or by fax, electronic mail, or mail request to the administrative contact address given below. Proposals not meeting the format described in the pamphlet may not be reviewed. In order to minimize unnecessary effort in proposal preparation and review, proposers are strongly encouraged to submit proposal abstracts in advance of full proposals. An original and no more than fifteen (15) copies of the proposal abstract must be submitted to DARPA/MTO, 3701 North Fairfax Drive, Arlington, VA 22203-1714 (Attn.: BAA 01-35) on or before 4:00 p.m., local time, Monday, October 1, 2001. Proposal abstracts received after this time and date may not be reviewed. Upon review, DARPA will provide written feedback on the likelihood of a full proposal being selected and the time and date for submission of a full proposal. Proposers not submitting proposal abstracts must submit an original and fifteen (15) copies of the full proposal to DARPA/MTO, 3701 North Fairfax Drive, Arlington, VA 22203-1714 (Attn.: BAA 01-35) on or before 4:00 p.m., local time, Monday, December 3, 2001, in order to be considered. This notice, in conjunction with the BAA 01-35 Proposer Information Pamphlet, constitutes the total BAA. No additional information is available, nor will a formal RFP or other solicitation regarding this announcement be issued. Requests for the same will be disregarded. The Government reserves the right to select for award all, some, or none of the proposals received. All responsible sources capable of satisfying the Government's needs may submit a proposal which shall be considered by DARPA. Input on technical aspects of the proposals may be solicited by DARPA from non-Government consultants/experts who are bound by appropriate non-disclosure requirements. Non-Government technical consultants/experts will not have access to proposals that are labeled by their offerors as "Government Only." Historically Black Colleges and Universities (HBCUs) and Minority Institutions (MIs) are encouraged to submit proposals and join others in submitting proposals; however, no portion of this BAA will be set aside for HBCU and MI participation due to the impracticality of reserving discrete or severable areas of research in wide bandgap semiconductor materials and devices. All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to one of the administrative addresses below; e-mail or fax is preferred. DARPA intends to use electronic mail and fax for correspondence regarding BAA 01-35. Proposals and proposal abstracts may not be submitted by fax or e-mail; any so sent will be disregarded. DARPA encourages use of the WWW for retrieving the Proposer Information Pamphlet and any other related information that may subsequently be provided. EVALUATION CRITERIA: Evaluation of proposal abstracts and full proposals will be accomplished through a technical review of each proposal using the following criteria, which are listed in descending order of relative importance: (l) overall scientific and technical merit, (2) potential contribution and relevance to DARPA mission, (3) plans and capability to accomplish technology transition, (4) offeror's capabilities and related experience, and (5) cost realism. Note: cost realism will only be significant in proposals which have significantly under or over-estimated the cost to complete their effort. The administrative addresses for this BAA are: Fax: (703) 696-2206 (Addressed to: DARPA/MTO, BAA 01-35), Electronic Mail: BAA01-35@darpa.mil; Mail: DARPA/MTO, ATTN: BAA 01-35; 3701 North Fairfax Drive, Arlington, VA 22203-1714. This announcement and the Proposer Information Pamphlet may be retrieved via the WWW at URL http://www.darpa.mil/ in the solicitations area.

Web Link

Visit this URL for the latest information about this (http://www.eps.gov/spg/ODA/DARPA/CMO/BAA01-35/listing.html)

Record

Loren Data Corp. 20010823/ASOL008.HTM (D-233 SN50V5T8)