96 -- SIC EPIWAFERS & SIC EPITAXAL DOPING CALIBRATION SERVICE

Notice Date

August 3, 2001

Contracting Office

NASA/Glenn Research Center, 21000 Brookpark Road, Cleveland, OH 44135

ZIP Code

44135

Solicitation Number

3-173943

Response Due

August 15, 2001

Point of Contact

Jean M. Boylan, Purchasing Agent, Phone (216) 433-2140, Fax (216) 433-2480, Email Jean.M.Boylan@grc.nasa.gov

E-Mail Address

Jean M. Boylan (Jean.M.Boylan@grc.nasa.gov)

Description

This procurement is being conducted under the Simplified Acquisition Procedures (SAP). SPECIFICATIONS FOR SILICON CARBIDE WAFERS: ITEM 1 * QUANTITY 3 EACH * SIC WAFERS WITH EPITAXIAL LAYERS THAT CONFORM TO THE FOLLOWING SPECIFICATIONS: ITEM 2 * QUANTITY ONE EACH * SIC EPITAXIAL DOPING CALIBRATIONS SERVICE (a)Shall be a single crystal of the 6H polytype. (b)Shall be round with a diameter of 50 mm 1 0.38 mm, and a thickness of 0.3 mm 1 0.1 mm. (c)On the back of each wafer (the unpolished side), identifying numbers/letters shall be produced by a laser evaporation process near the primary wafer flat. (d)Two wafers shall be aluminum doped with a resistivity less than 5 ohm-cm.One wafer shall be nitrogen doped with a resistivity less than 0.040 ohm-cm. (e)Shall include a flat along the edge with an orientation of {1010}1100. (f)Shall be Cree "production grade" (i.e. at least 70% usable surface), or better. (g)Shall conform to all Cree research standard specifications for standard silicon carbide epitaxial wafer, February 2001 Revision, as contained in the document at http://www.cree.com/ftp/pub/sicctlg_read_new.pdf. (h)On the front of each wafer, there shall be the following singe-crystal homoepitaxial SiC epilayers, specified and verifiable by SIMS analysis and doping determined by C-V measurement.(Layer i.) Deposited on top of the wafer substrate, a p-type homoepitiaxial SiC layer of 5 x 1018 cm-3 1 2.5 x 1018 cm-3 of 1.0 1 0.25 micrometers thickness.(Layer ii.) Deposited on top of the Layer (i) p-layer described above, a p-type homoepitaxial SiC layer of less than 5 x 1015 cm-3 of 6.0 1 1 micrometers thickness. Lower doping is desired on a "best effort" basis, but the entire layer shall remain of p-type conductivity.(Transition Layer) Deposited on top of the p-layer described above in (ii), a doping transition layer from the p-type doping achieved in Layer (ii) above to the n-type doping described for Layer (iii) below. The doping of this transition layer shall not anywhere exceed the n-type doping described for Layer (iii) below anywhere in or between Layers (ii) and (iii). The thickness of this transition layer shall not exceed 0.04 5m in thickness, and smaller thickness is desired so long as the doping specification described above is met.(Layer iii.) Deposited on top of the Transition Layer described above, an n-type homoepitaxial SiC layer of 9.0 x 1016 cm-3 1 2 x 1016 cm-3 of 0.45 1 0.05 micrometers thickness. (Layer iv.) Deposited on top of the Layer (iii) n-layer described above, a p-type homoepitaxial SiC layer of greater than 1 x 1020 cm-3 of 0.2 1 0.05 micrometers thickness. Higher doping is desired (up to 1 x 1021 cm-3 ) on a "best effort" basis. (i)Orientation of the epilayer (front) face shall be 3.50 1 0.50off the (0001) plane, tilted toward the a1120q direction. (j)The epilayer (front) face shall be the silicon face. The provisions and clauses in the RFQ are those in effect through FAC 97-25. The NAICS Code and the small business size standard for this procurement are 212325 and 500, respectively. The DPAS rating for this procurement is DO-C9. The Representations and Certifications required by FAR 52.2l2-3 may be obtained via the internet at URL: http://ec.msfc.nasa.gov/msfc/pub/reps_certs/sats/ The FAR may be obtained via the Internet at URL: http://www.arnet.gov/far/ The NFS may be obtained via the Internet at URL: http://www.hq.nasa.gov/office/procurement/regs/nfstoc.htm An ombudsman has been appointed -- See NASA Specific Note "B". NASA/GRC intends to purchase the items from Cree Inc.. THIS IS A SOLE SOURCE. The required SIC wafers are produced using a proprietary Cree Inc. process. The wafers are used for test purposed. Any change or substitution of wafers would compromise test data and test resultls. This notice is for information purposes only.

Web Link

Click here for the latest information about this notice (http://nais.msfc.nasa.gov/cgi-bin/EPS/bizops.cgi?gr=D&pin=22#3-173943)

Record

Loren Data Corp. 20010807/96SOL001.HTM (D-215 SN50T9E6)