B -- STUDY OF ION IMPLANTATION

Notice Date

July 13, 2001

Contracting Office

1940 ALLBROOK DRIVE, SUITE 3, WRIGHT-PATTERSON AFB,OH, 45433-5309

ZIP Code

45433-5309

Solicitation Number

F33600-01-R-1029

Response Due

July 24, 2001

Point of Contact

BOBBY L. FORD,(937)257-8344 X 4487

E-Mail Address

BOBBY.FORD@WPAFB.AF.MIL (BOBBY.FORD@WPAFB.AF.MIL)

Description

Background "THIS IS A COMBINED SYNOPSIS/SOLICITATION FOR COMMERCIAL ITEMS ISSUED IAW THE PROVISIONS OF FAR PART 12. THIS IS A SOLICITATION FOR THE PURPOSE OF BUYING THE FOLLOWING SERVICES: CONDUCT POST-DOCTORATE RESEARCH IN THE STUDY OF ION IMPLANTATION AND METALLIC CONTACTS TO WIDE BANDGAP SEMICONDUCTORS SUCH AS GaN AND AlxGal-xN EPITAXIAL LAYERS AND AlxGal-xN/GaN HETEROSTRUCTURES AND QUANTUM WELL STRUCTURES GROWN ON SAPPHIRE OR SiC SUBSTRATES. THE EFFORT WILL BE TO CONDUCT A FUNDAMENTAL RESEARCH PROGRAM STUDYING THE ION IMPLANTATION TECHNIQUE FOR DOPING OF AS-GROWN GaN AND AlxGal-xN WITH VARIOUS ACCEPTOR AND DONOR ION SPECIES TO PRODUCE GOOD p- AND n-type GaN AND AlxGal-xN, AND INVESTIGATING OHMIC AND SCHOTTKY CONTACTS ON AlxGal-xN AS A FUNCTION OF Al MOLE FRACTION x. THE CONTRACTOR WILL SUPPORT OTHER RELATED FACULTY RESEARCH EFFORTS, AND RELATED MASTERS THESES AND PH.D. DISSERTATIONS. THE CONTRACTOR WILL ALSO INVESTIGATE OPTIMUM ION IMPLANTATION CONDITIONS FOR SUCCESSFUL DOPING OF GaN AND AlxGal-xN, ESPECIALLY p-type DOPING. IN ADDITION, THE AS-GROWN n- AND p-type AlxGal-xN WILL ALSO INVESTIGATE USING ION IMPLANTATION TECHNIQUES WITH APPROPRIATE IMPLANTS TO PRODUCE GOOD p-n JUNCTION DIODES. VARIOUS METALS AND ALLOYS WILL BE INVESTIGATED TO PRODUCE THE BEST CONDITIONS FOR OBTAINING THERMALLY STABLE GOOD LOW OHMIC CONTACTS AND GOOD STABLE RECTIFYING SCHOTTKY METALLIC CONTACTS FOR APPLICATIONS TO THE FABRICATION OF HIGH TEMPERATURE AND HIGH FREQUENCY ELECTRONIC DEVICES, AND SHORTER WAVE -LENGTH OPTOELECTRONIC DEVICES SUCH AS UV DETECTORS, UV RANGE CURRENT-INJECTION LASER DIODES, AND LIGHT EMITTING DIODES. THE EMPHASIS WILL BE GIVEN TO BOTH p- AND n-type AlxGal-xN WITH HIGH AL MOLE FRACTION (X 0.3) GROWN ON SAPPHIRE OF SiC. THE MAJORITY OF CONTRACT WORK WILL BE PERFORMED AT AIR FORCE INSTITUTE OF TECHNOLOGY (AFIT), BUILDING 640 AND 644, AREA -- B, 2950 P STREET, WRIGHT-PATTERSON AIR FORCE BASE, OH 45433-7765. THE PERIOD OF PERFORMANCE WILL BE ON OR ABOUT 1 AUGUST 2001 FOR A DURATION OF ONE CALENDER YEAR. NOTE: THERE WILL BE NO PAPER COPIES OF THIS SOLICITATION AVAILABLE! THIS IS A 100% SMALL BUSINESS SET-ASIDE. PROPOSALS ARE DUE 24 JULY 2001 @ 3:00 PM EDT. FAXED, E-MAILED, OR PAPER COPIES OF PROPOSALS WILL BE ACCEPTED. MR. MICHAEL HIGGINS HAS BEEN APPOINTED OMBUDSMAN TO HEAR CONCERNS DURING THE PROPOSAL DEVELOPMENT. THE PURPOSE OF THIS OFFICE IS TO COMMUNICATE CONTRACTOR CONCERNS, ISSUES, DISAGREEMENTS AND RECOMMENDATIONS TO THE APPROPRIATE GOVERNMENT PERSONNEL. EXISTENCE OF THE OMBUDSMAN DOES NOT DIMINISH THE AUTHORITY OF THE CONTRACTING OFFICER, THE OMBUDSMAN DOES NOT PARTICIPATE IN THE PREPARATION OF THE SOLICITATION, THE STATEMENT OF WORK, OR THE EVALUATION OF THE PROPOSALS. MR. HIGGINS CAN BE REACHED AT: (937) 255-6005. FOR ROUTINE MATTERS ON INDIVIDUAL SOLICITATIONS, CONTACT MR. BOBBY FORD OF THE BUYING OFFICE, AT 937-257-8344/EXT 4487, OR AT ASC/PKWRM, 1940 ALLBROOK DRIVE, SUITE 3, WPAFB, OH 45433. ALL RESPONSIBLE SOURCES MAY SUBMIT A PROPOSAL WHICH WILL BE CONSIDERED. "

Web Link

01R1029-STUDY OF ION IMPLANTATION (http://www.pixs.wpafb.af.mil/pixslibr/01R1029/01R1029.asp)

Record

Loren Data Corp. 20010717/BSOL006.HTM (D-194 SN50R804)