A -- TWO ALTERNATIVE STARTING-MATERIAL SUBSTRATES FOR THE FABRICATION OF

Notice Date

June 19, 2001

Contracting Office

Department of Commerce, National Institute of Standards and Technology (NIST), Acquisition and Logistics Division, 100 Bureau Drive, Building 301, Room B129, Mail Stop 3571, Gaithersburg, MD, 20899-3571

ZIP Code

20899-3571

Description

Researchers at the National Institute of Standards and Technology (NIST) are working on the following technologies: Single-Crystal DC reference materials are fabricated as narrow lines of silicon eteched in the thin layer of single crystal silicon which is part of silicon on insulator (SOI) structure. SIMOX (oxygen ion implanted silicon) and BESOI (two atomically bonded silicon-silicon oxide wafers) structures have been demonstrated successfully, but both have disadvantages. Two alternative technologies are proposed. The first is anodic (electrolytic) bonding of a silicon wafer to a glass substrate. This approach has been demonstrated at the University of Illinios. The second is junction isolation on 110 bulk silicon substrates . For further information, contact: National Institute of Standards and Technology, Office of Technology Partnerships, 100 Bureau Drive, Stop 2200, Gaithersburg, MD, 20899; This is not an announcement of a contract action or a grant

Web Link

Visit this URL for the latest information about this (http://www.eps.gov/spg/DOC/NIST/AcAsD/NISTDOCKETNUMBER00-032/listing.html)

Record

Loren Data Corp. 20010621/SPMSC006.HTM (D-170 SN50P3G9)