35 -- RADIO FREQUENCY PLASMA ETCHING SYSTEM

Notice Date

June 12, 2001

Contracting Office

Army Research Laboratory, Attn: AMSSB-ACC-AA, Aberdeen Proving Ground, MD 21005-5066

ZIP Code

21005-5066

Solicitation Number

DAAD17-01-R-0017

Response Due

July 6, 2001

Point of Contact

Jeanine Worthington, Contract Specialist, 410-278-6514

Description

The US Army Research Lab (ARL) intends to purchase on a name brand or equal basis a radio frequency plasma etching system. The brand name product is manufactured by ST Systems Inc., 611 Veterans Blvd, Suite 107, Redwood City, CA, model AOE (Advanced Oxide Etcher). The minimum salient characteristics are: 1) Utilizes a planar ICP coil positioned parallel to the wafer, 2) sidewalls of the chamber incorporate multi-pole magnetic confinement to prevent interaction of the plasma and the chamber sidewalls, 3) chamber is differentially heated to minimize deposition of the reactant etch species, 4) provides Si02 etch depth capability 100 micrometers, 5) has an inductively coupled plasma reactive ion etch design. Please submit a request for the solicitation via fax to 410-278-6522, ATTN: DAAD17-01-R-0017. No telephone requests will be honored.

Record

Loren Data Corp. 20010614/35SOL003.HTM (W-163 SN50O6I7)