59 -- PROCESS IGBT WAFERS

Notice Date

June 11, 2001

Contracting Office

Naval Research Laboratory, Attn: Code 3420, 4555 Overlook Ave. SW, Washington, DC 20375

ZIP Code

20375

Solicitation Number

N00173-01-Q-0110

Point of Contact

Darlene Copp, 202-767-2374

E-Mail Address

SolQnA@labmis.nrl.navy.mil (http://supply.nrl.navy.mil/Simplified_Acq_Frame%20.htm)

Description

Naval Research Laboratory intends to award to Dynex Semiconductor LTD, on other than full and open competitive basis, for services for completing 2 lots of 25 each 100mm diameter wafers that are populated with fabricated high voltage >6500V Insulated Gate Bipolar Transistor (IGBT) with breakdown voltage greater than 6500V that are made on float zone silicone wafer, shipped in 4" wafer form. Sole source is based on the ability to fabricate IGBTs with greater than approximately 1400V breakdown. See note(s)22.

Record

Loren Data Corp. 20010613/59SOL004.HTM (W-162 SN50O5V8)