TWO ALTERNATIVE STARTING-MATERIAL SUBSTRATES FOR THE FABRICATION OF SINGLE-CRYSTAL CD REFERENCE-MATERIALS

Notice Date

March 7, 2001

Contracting Office

National Institute of Standards & Technology, Acquisition & Assistance Div.,100 Bureau Drive Stop 3572, Bldg. 301, Rm B117, Gaithersburg, MD 20899-3572

ZIP Code

20899-3572

E-Mail Address

NIST Contracts Office (cfoster@nist.gov)

Description

Researchers at the National Institute of Standards and Technology (NIST) are working on the following technologies. Single-Crystal DC reference materials are fabricated as narrow lines of silicon eteched in the thin layer of single crystal silicon which is part of silicon on insulator (SOI) structure. SIMOX (oxygen ion implanted silicon) and BESOI (two atomically bonded silicon-silicon oxide wafers) structures have been demostrated successfully, but both have disadvantages. Two alternative technologies are proposed. The first is anodic(electrolytic) bonding of a silicon wafer to a glass substrate. This approach has been demonstrated at the University of Illinios. The second is junction isolation on 110 bulk silicon substrates. For further information, contact the: National Institute of Standards and Technology, Office of Technology Partnerships, 100 Bureau Drive, Stop 2200, Gaithersburg, Maryland 20899; Telecopy: 301-869-2751. This is not an announcement of an contract action or a grant.

Web Link

NIST Contracts Homepage (http://www.nist.gov/admin/od/contract/contract.htm)

Record

Loren Data Corp. 20010309/SPMSC007.HTM (W-066 SN50F5T9)