Smithsonian Astrophysical Observatory, 60 Garden Street, Cambridge, Massachusetts 02138-1516

66 -- HFET AMPLIFIER 4 TO 6 GHZ SOL RFQ-BF2044 DUE 102898 POC Rena Cerbone, TEL. 617/495-7445, FAX 617/495-7485, email: rcerbone@cfa.harvard.edu The Smithsonian Astrophysical Observatory (SAO) intends to award on a Sole Source basis, a purchase order to the National Radio Astronomy Observatory for twelve (12) each Cryogenic High Electron Mobility Field Effect Transistor (HFET) Amplifiers 4 to 6 GHz. These units are uniquely low noise for the required frequency range which is 3.95 -- 5.85 GHz; Gain: 30 dB minimum, 35 dB maximum; Noise Temperature: T average less than or equal to 8 K; Typical Tmin: 6 K at 5 GHz; A cooled isolator (Contractor does not supply) is recommended on the input of this amplifier; Noise temperature and gain measurement data for 20 K physical temperature will be supplied with each amplifier; Amplifier specifications met at 20 K physical temperature; RF connectors: K-connector (input); K-connector (output); Power requirements: +15V, 150 mA; -- - -15V, 50mA; Amplifier power dissipation: 100 mW maximum; Bias board plus connecting cable supplied with amplifier; and Microtech GM-2 male connector is used for LED power. Anexternal dropping resistor is required to achieve 6V at 6mA. Microtech GF-2 is supplied. This amplifier is required in the overall design on SAO's Submillimeter Array (SMA) as they are a critical component that sets the performance of the array when observing. Imposed noise temperatures allow less observing time on any given source. These units must be compatible with existing SMA equipment. No Solicitation package will be issued. A determination by the Government not to compete this proposed procurement based upon responses to this notice is solely within the discretion of the Government. This acquisition is being conducted under the guidelines as set forth in the Simplified Acquisition Procedures (SAP). Expected award date is November 2, 1998. Posted 10/23/98 (I-SN264855). (0296)

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