TECHNOLOGY TRANSFER OPPORTUNITY The U.S. Department of Energy (DOE), its laboratories, and production facilities are committed to helping businesses in the United States to improve the cycle from new ideas and product innovation to product development and commercialization. In order to achieve this goal, the DOE has put in place a program to make technological capabilities developed at its laboratories available to the private sector for commercial applications. Sandia National Laboratories (Sandia) is one of the participating laboratories in this program. Over the past three decades, the Ion Beam Materials Research Laboratory, (IBMRL), User Facility at Sandia National Laboratories has developed at unique set of Ion Beam Analysis, IBA tools which have been found to be particularly useful in the US Defense Mission at Sandia. These IBA techniques are now being made available for industrial or university research applications via the designation of this accelerator laboratory as a Technology Deployment/User Facility. The IBMRL facility is based around a Pelletronized 6MV terminal Tandem Van Graaff accelerator to which we have recently added a 1.9 MeV/amu Radio Frequency Quadrupole Heavy Ion linac booster. Some of the facilities which are available include: 1. Heavy Ion Backscattering Spectrometry (HIBS), a joint SNL-SEMATECH project, which has shown sensitivity to surface metal impurities on Is wafers of less than 10 atoms/cm. A stand-alone prototype HIBS system now exists which can be used to examine multiple spots on 4'' - 8'' diameter IC wafers. 2. Time of Flight Elastic Recoil Detection (TOF-ERD) can be used to depth profile major elements in the near-surface (100nm) of solids with extraordinary depth resolution, approaching 1 nm at the surface. Since Au ions are used for the incident beam, virtually all of the elements in the periodic table can be examined this way. 3. Nuclear Enhanced Backscattering Spectrometry is really just like RBS, but relies on the high energy ions which can be accelerated on the tandem, and is particularly effective in profiling light elements (say the second row of the peiodic table) in heavier matrices. The high energies make this possible by enhancing the cross section of scattering from the light elements, while decreasing the scattering from the heavier substrate atoms. 4. All of the routine IBA techniques can be performed on a scanned nuclear microbeam which has a 1-2 micron beam spot. In addition, several of these IBA techniques have been done externally, i.e. in air, by extracting the beam from the vacuum system through thin foils. Such external IBA, or X-IBA, can be quite advantageous when analyzing extremely large samples, or materials which are not compatible with vacuum systems. Our X-IBA system won an R&D 100 award. 5. Another analytical tool which has been included in the IBMRL User Facility is a Double Crystal X-ray Diffractometer and 3D-Reciprocal Space Mapping system which can be used to measure in-depth strain profiles. This tool has particular utility in Sandia's compound semiconductor research program. We are seeking industrial or university participants. To express interest, please write or fax to Sandia National Laboratories, attn. Ms. Kay Carter, P.O. Box 5800, MS 1380, Albuquerque, NM 87185-1380, Fax (505)271-7867. The technical contact for the IBMRL user facility is Barney L. Doyle, Sandia National Laboratories, P.O. Box 5800, MS 1056, Albuquerque, NM 87185-1056, Fax (505)844-7775, phone (505)844-7568, email: bldoyle@sandia.gov.

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