SPECIAL NOTICE
59 -- TECHNOLOGY LICENSING OPPORTUNITY: Electrically Pumped Nanocrystal Laser Diode
- Notice Date
- 7/22/2026 8:40:24 AM
- Notice Type
- Special Notice
- NAICS
- 334413
— Semiconductor and Related Device Manufacturing
- Contracting Office
- TRIAD - DOE CONTRACTOR Columbus OH 43201 USA
- ZIP Code
- 43201
- Solicitation Number
- S-167655
- Response Due
- 10/1/2026 4:00:00 PM
- Archive Date
- 07/31/2027
- Point of Contact
- Caleb Ledgerwood, Lindsay Augustyn
- E-Mail Address
-
licensing@lanl.gov, licensing@lanl.gov
(licensing@lanl.gov, licensing@lanl.gov)
- Small Business Set-Aside
- NONE No Set aside used
- Description
- The Electrically Pumped Nanocrystal Laser Diode is a solution-processed laser technology developed by scientists at Los Alamos National Laboratory that enables electrically driven laser emission using engineered colloidal nanocrystals, also known as colloidal quantum dots. By overcoming long-standing challenges associated with nonradiative Auger recombination, heat build-up and optical losses in charge-transporting device layers, the technology achieves efficient room-temperature optical gain in a platform compatible with scalable, lower-cost manufacturing and on-chip integration. This innovation opens a new pathway toward compact, high-performance optical amplifiers and laser sources for integrated photonics, optical communications, sensing and next-generation optoelectronic systems. The Challenge: For years, researchers have sought to develop low-cost lasers that can be made from solution-based materials�essentially �printable� semiconductor inks�but electrically pumped operation has remained elusive. The colloidal quantum dots used as the gain medium suffered from three fundamental limitations: rapid nonradiative energy loss through Auger recombination, excessive heat generation under the high current densities required for lasing, and strong optical losses in the charge-transporting layers of conventional LED device architectures. Together, these challenges prevented the buildup of sufficient optical gain for laser operation. As a result, electrically pumped nanocrystal lasers remained a long-sought but unrealized goal, limiting the ability to create scalable, lower-cost, chip-integrated laser sources. The Electrically Pumped Nanocrystal Laser Diode overcomes these fundamental barriers and turns a long-standing scientific challenge into a commercially viable pathway. Problems Solved: The Electrically Pumped Nanocrystal Laser Diode overcomes the key technical barriers that have prevented electrically powered nanocrystal lasers from becoming practical. It suppresses carrier losses caused by Auger recombination, incorporates a device architecture that effectively manages heat and enables stable operation at high current densities, and reduces optical losses that once overwhelmed light amplification. By combining engineered nanocrystals with a heat-managed current-focusing architecture and an integrated low-loss photonic waveguide, the technology achieves strong net optical gain and provides a practical pathway toward electrically pumped nanocrystal laser diodes compatible with scalable, low-cost manufacturing. Key Advantages: Electrically Pumped Laser Platform � Enables room-temperature electrically driven optical gain and provides a practical pathway toward electrically pumped nanocrystal laser diodes, overcoming a long-standing challenge in solution-processed photonics. Scalable, Lower-Cost Manufacturing � Employs solution-processable colloidal quantum dots compatible with high-throughput fabrication and integration on a wide variety of substrates. High Efficiency and Stable Operation � Engineered nanocrystals suppress nonradiative Auger recombination, while a heat-managed device architecture enables stable operation at the high current densities required for lasing. Low-Loss Photonic Architecture � An integrated low-loss waveguide enhances optical confinement and net optical gain, enabling efficient light amplification and high optical output. Platform Versatility � Applicable to laser diodes, optical amplifiers, integrated photonic circuits, and next-generation optoelectronic systems. Market Applications: Optical Communications � Laser sources and optical amplifiers for fiber-optic telecommunications and high-speed data communications. Integrated Photonics � On-chip lasers and amplifiers for silicon photonics, optical interconnects, and photonic integrated circuits. Sensing & Instrumentation � Compact coherent light sources for spectroscopy, environmental monitoring, metrology, and precision sensing. Defense & Aerospace � Optical systems for lidar, free-space optical communications, imaging, navigation, and advanced sensing. Consumer Electronics & Display Technologies � Miniaturized laser sources for next-generation consumer devices, displays, and wearable technologies. Medical & Life Sciences � Light sources for biomedical imaging, diagnostics, flow cytometry, and analytical instrumentation. Development Status: TRL 4 US Patent pending LA-UR-26-25635 LANL Tech Partnerships: Unlock the Innovative Potential Los Alamos National Laboratory offers a wide range of cutting-edge technologies and capabilities that may provide your company with a competitive edge in the market and unlock the innovative potential that can enhance, refine, and revolutionize your products. LANL�s licensing program focuses on moving inventions developed by our researchers to commercial innovations. Patented and patent pending inventions and copyrighted software are available to existing and start-up companies through exclusive and non-exclusive licensing agreements. For specific discussions, please contact licensing@lanl.gov. Note: This is not a call for external services for the development of this technology. https://www.lanl.gov/engage/collaboration/feynman-center/partner-with-us/licensing-technology m.lanl.gov/tech-search
- Web Link
-
SAM.gov Permalink
(https://sam.gov/workspace/contract/opp/705e2fc017e1425c94a85ad72477e43d/view)
- Place of Performance
- Address: Los Alamos, NM 87545, USA
- Zip Code: 87545
- Country: USA
- Zip Code: 87545
- Record
- SN07894892-F 20260724/260722230045 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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