SPECIAL NOTICE
99 -- TECHNOLOGY/BUSINESS OPPORTUNITY Method for Producing Laser Gain Media by Atomic Layer Deposition of Rare Earth Oxides on Optical Grade Materials
- Notice Date
- 5/10/2024 2:36:07 PM
- Notice Type
- Special Notice
- NAICS
- 334413
— Semiconductor and Related Device Manufacturing
- Contracting Office
- LLNS � DOE CONTRACTOR Livermore CA 94551 USA
- ZIP Code
- 94551
- Solicitation Number
- IL-13529
- Response Due
- 6/10/2024 3:00:00 PM
- Archive Date
- 06/25/2024
- Point of Contact
- IPO Support, Phone: 9254226416, Elsie Quaite-Randall, Phone: 9254237302
- E-Mail Address
-
ipo-support@llnl.gov, quaiterandal1@llnl.gov
(ipo-support@llnl.gov, quaiterandal1@llnl.gov)
- Description
- Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its Method for Producing Laser Gain Media by Atomic Layer Deposition of Rare Earth Oxides on Optical Grade Materials. Background: Optical gain media configurations that work best for high power lasers, especially thin disk lasers, are not easily fabricated from single crystal boules or through standard hot-pressing techniques. There is a need in the laser industry for a cost-effective method to deposit customized optically active thin films over arbitrary shaped substrates. Description: Powder atomic layer deposition process is used to coat nanopowders of host materials (e.g. yttrium aluminum garnet) with optically active neodymium organometal precursor followed by O2/O3 RF plasma to convert to a single layer of Nd2O3. The process can be repeated to build arbitrarily thick layers with custom doping profiles and followed by post-deposition sintering to control micro-crystallization. Advantages/Benefits:� Process can generate custom composition optically active thin films for thin disk laser gain media Monolayer precision thickness control and composition profile. Enables rapid prototyping of new laser gain materials. Avoids expensive single crystal growth and thin disk fabrication processes. Potential Applications:� Realizing novel compact diode-pumped solid-state laser systems. Development Status:� Current stage of technology development:� TRL 3-4 LLNL has filed for patent protection on this invention. U.S. Patent Application No. 2022/0042172 System and Method for Atomic Layer Deposition of Rare Earth Oxides on Optical Grade Materials for Laser Gain Media published 2/10/2022 LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.� Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process. Note:� THIS IS NOT A PROCUREMENT.� Companies interested in commercializing LLNL's Method for Producing Laser Gain Media by Atomic Layer Deposition of Rare Earth Oxides on Optical Grade Materials should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's Method for Producing Laser Gain Media by Atomic Layer Deposition of Rare Earth Oxides on Optical Grade Materials. The subject heading in an email response should include the Notice ID and/or the title of LLNL�s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA� 94551-0808 Attention:�� IL-13529
- Web Link
-
SAM.gov Permalink
(https://sam.gov/opp/7602c568044d43059e1b9ead2807dbbd/view)
- Place of Performance
- Address: Livermore, CA, USA
- Country: USA
- Country: USA
- Record
- SN07059818-F 20240512/240510230041 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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