SPECIAL NOTICE
99 -- TECHNOLOGY/BUSINESS OPPORTUNITY Diffused ?-Ga2O3 Photoconductive Devices
- Notice Date
- 2/22/2024 1:54:17 PM
- Notice Type
- Special Notice
- NAICS
- 334419
— Other Electronic Component Manufacturing
- Contracting Office
- LLNS � DOE CONTRACTOR Livermore CA 94551 USA
- ZIP Code
- 94551
- Solicitation Number
- IL-13771
- Response Due
- 3/23/2024 2:00:00 PM
- Archive Date
- 04/07/2024
- Point of Contact
- Genaro Mempin, Phone: 9254231121, Charlotte Eng, Phone: 9254221905
- E-Mail Address
-
mempin1@llnl.gov, eng23@llnl.gov
(mempin1@llnl.gov, eng23@llnl.gov)
- Description
- Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its Diffused ?-Ga2O3 Photoconductive Devices. Background: Beta-gallium oxide (b-Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor that possesses outstanding physical properties for power electronics and optoelectronics.� A challenge for this material is modifying it such that deep level states in the bandgap could be formed.� By selecting the appropriate dopant, with both donors and transition metals (TM), b-Ga2O3 would then be a promising photoconductive material for both photoconductive semiconductor switches (PCSS) and optically addressable light valves (OALV). ��Currently, TM-doped layers would need to be grown by either epitaxy method, which is expensive or thinning bulk material, which produce fragile layers that are hard to process. �LLNL researchers were able to develop diffused ?-Ga2O3 photoconductive devices without needing to resort to either method and use commercially available b-Ga2O3 material. Description: The researchers� approach leverages the concept that dopants have high diffusivities in Ga2O3; the key lies in the selection of the appropriate dopant.� This LLNL invention describes two device types that employ this design: PCSS:� The device consists of an n-type ?-Ga2O3 wafer where the top surface is diffused with TM to form a photoconductive layer.� A transparent conductor is then deposited onto this photoconductive layer.� An ohmic metal contact is placed on the transparent conductor to facilitate electrical interfacing with the switch. On the opposite side of the substrate, a metal contact is placed in contact with the n-type ?-Ga2O3 to form both an ohmic contact and act as a mirror. OALV:� The device consists of two wafers/optics that are bonded together to form a liquid crystal cell.� The key innovation over other OALV designs is the replacement of bismuth silicon oxide with the diffused ?-Ga2O3 photoconductive layer. Advantages/Benefits:� The Value Proposition is Improved performance at less manufacturing costs. LLNL�s diffused ?-Ga2O3 photoconductive devices� have numerous advantages over traditional optical switches, such as: Outstanding breakdown field strength Tunable for optimal device performance. Less expensive and easier to manufacture than crystal growth equipment Potential Applications:� High power microwave sources High frequency amplifiers and pulse generators OALVs Development Status:� Current stage of technology development:� TRL 3 LLNL has filed for patent protection on this invention. LLNL has a huge portfolio of UWBG-based photoconductive semiconductor switches and OALVs. LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.� Note:� THIS IS NOT A PROCUREMENT.� Companies interested in commercializing LLNL's Diffused ?-Ga2O3 Photoconductive Devices should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's Diffused ?-Ga2O3 Photoconductive Devices. The subject heading in an email response should include the Notice ID and/or the title of LLNL�s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA� 94551-0808 Attention:�� IL-13771
- Web Link
-
SAM.gov Permalink
(https://sam.gov/opp/90e531d35e774b91885e4f6778a4ca66/view)
- Place of Performance
- Address: Livermore, CA, USA
- Country: USA
- Country: USA
- Record
- SN06973510-F 20240224/240222230043 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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