SPECIAL NOTICE
99 -- TECHNOLOGY/BUSINESS OPPORTUNITY Photoconductive Semiconductor Laser Diodes and LEDs
- Notice Date
- 2/2/2024 10:27:21 AM
- Notice Type
- Special Notice
- NAICS
- 334413
— Semiconductor and Related Device Manufacturing
- Contracting Office
- LLNS � DOE CONTRACTOR Livermore CA 94551 USA
- ZIP Code
- 94551
- Solicitation Number
- IL-13596
- Response Due
- 3/3/2024 11:00:00 AM
- Archive Date
- 03/18/2024
- Point of Contact
- IPO Support, Phone: 9254226416, Elsie Quaite-Randall, Phone: 9254237302
- E-Mail Address
-
ipo-support@llnl.gov, quaiterandal1@llnl.gov
(ipo-support@llnl.gov, quaiterandal1@llnl.gov)
- Description
- Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its Photoconductive Semiconductor Laser Diodes and LEDs technology. Background: UV and deep-UV light emitting and laser diodes based on the III-Nitride material system (typically alloys of Al(Ga,In)N) have been the subject of intense interest due to the lack of semiconductor lasers at this wavelength. In recent years, there have been numerous demonstrations of light emitting diodes in this wavelength range. Success with producing laser diodes is more limited, with almost all reports based on optical pumping of the semiconductor with an even deeper UV excimer laser, obviously not a practical solution. Furthermore, all reports of both electrically pumped LEDs and LDs suffer from low output power and efficiency, especially as the wavelengths push deeper into the UV. Description: This invention proposes a method to overcome the key limitation of electrically pumped lasers based on AlN, AlGaN, or AlInGaN, namely the lack of suitable shallow donor and acceptor dopants. As the band gap of these materials increases (and the emission wavelength decreases), both electrons and holes require greater thermal energies in order to ionize. By using sub-band gap light of sufficient energy to excite electrons (holes) from the relatively deep donor (acceptor) levels in the n-type (p-type) layer, the conductivity of these layers can be effectively increases by many orders of magnitude and both electrons and holes can be injected into the quantum well of the device, resulting in light emission. Advantages/Benefits:� Uses significantly less energy to create a UV/DUV photon than an excimer laser. UV/DUV laser diode could potentially be integrated on chip using an InGaN based layer. Using total internal reflection of whispering gallery mode can overcome the key shortcoming of low absorption coefficient of the dopants. The effective carrier lifetime of the excited electrons and holes in the p- and n-type layers can be designed to be longer than when using an above band gap laser. Potential Applications:� Compact, efficient laser diode sources for lithography and metrology, biotechnology and materials processing applications. Development Status:� Current stage of technology development:� TRL 2 LLNL has filed for patent protection on this invention. U.S. Patent Application No. 2023/0327400 Photoconductive Semiconductor Laser Diodes and LEDs published 10/12/2023 LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.� Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process. Note:� THIS IS NOT A PROCUREMENT.� Companies interested in commercializing LLNL's Photoconductive Semiconductor Laser Diodes and LEDs technology should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's Photoconductive Semiconductor Laser Diodes and LEDs technology. The subject heading in an email response should include the Notice ID and/or the title of LLNL�s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA� 94551-0808 Attention:�� IL-13596
- Web Link
-
SAM.gov Permalink
(https://sam.gov/opp/59b9e26818fe494fa0ba35ff72542510/view)
- Place of Performance
- Address: Livermore, CA, USA
- Country: USA
- Country: USA
- Record
- SN06953311-F 20240204/240202230040 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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