SPECIAL NOTICE
99 -- TECHNOLOGY/BUSINESS OPPORTUNITY Strain Control of Temperature-Dependent Wavelength Optoelectronic Devices
- Notice Date
- 2/2/2024 12:02:39 PM
- Notice Type
- Special Notice
- NAICS
- 334413
— Semiconductor and Related Device Manufacturing
- Contracting Office
- LLNS � DOE CONTRACTOR Livermore CA 94551 USA
- ZIP Code
- 94551
- Solicitation Number
- IL-13312
- Response Due
- 3/3/2024 1:00:00 PM
- Archive Date
- 03/18/2024
- Point of Contact
- IPO Support, Phone: 9254226416, Elsie Quaite-Randall, Phone: 9254237302
- E-Mail Address
-
ipo-support@llnl.gov, quaiterandal1@llnl.gov
(ipo-support@llnl.gov, quaiterandal1@llnl.gov)
- Description
- Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its Strain Control of Temperature-Dependent Wavelength Optoelectronic Devices technology. Background: LEDs and Laser Diodes have emission wavelengths that are inherently temperature dependent and that is undesirable for most applications. Current approaches to resolving this issue involve engineering the effective bandgap energy through compositional control. Since the composition controls properties other than emission wavelength it is not possible to optimize them as well as making the emission wavelength athermal. Description: This invention proposes to engineer the temperature dependence of the emission wavelength of LEDs and laser diodes. The approach is to use a strain-inducing coating to counteract the intrinsic temperature coefficient of the emission wavelength of the LED or laser diode device thereby rendering it athermal. This invention avoids additional complexity, size, weight and power dissipation of external temperature control schemes. Advantages/Benefits:� Controls the emission wavelength temperature coefficient without affecting other parameters. Creates an athermal device without affecting other compositionally dependent parameters. Doesn�t require complex and costly external temperature stabilization schemes. Avoids growing size, weight and power requirements. Simplifies the fabrication process and improves overall yield. Avoids lattice-mismatched compositional strains that could end up cracking the device. Potential Applications:� Higher power laser diode sources for lithography and metrology, biotechnology and materials processing applications. Development Status:� Current stage of technology development:� TRL 3-4 LLNL has patent(s) on this invention. U.S. Patent No. 10,992,105 Strain Control in Optoelectronic Devices published 4/27/2021 LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.� Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process. Note:� THIS IS NOT A PROCUREMENT.� Companies interested in commercializing LLNL's Strain Control of Temperature-Dependent Wavelength Optoelectronic Devices technology should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's Strain Control of Temperature-Dependent Wavelength Optoelectronic Devices technology. The subject heading in an email response should include the Notice ID and/or the title of LLNL�s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA� 94551-0808 Attention:�� IL-13312
- Web Link
-
SAM.gov Permalink
(https://sam.gov/opp/9cf4211dd31d485aa118b69175c634b9/view)
- Place of Performance
- Address: Livermore, CA, USA
- Country: USA
- Country: USA
- Record
- SN06953306-F 20240204/240202230040 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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