SAMDaily.us | MOD | 34 | HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System

SAMDAILY.US - ISSUE OF AUGUST 11, 2023 SAM #7927
MODIFICATION

34 -- HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System

Notice Date: 8/9/2023 10:16:32 AM
Notice Type: Justification
Contracting Office: DEPT OF COMMERCE NIST GAITHERSBURG MD 20899 USA
ZIP Code: 20899
Solicitation Number: NB680000-23-00677
Archive Date: 09/08/2023
Point of Contact: Ian Robinson, Phone: 3034976126
E-Mail Address: ian.robinson@nist.gov
(ian.robinson@nist.gov)
Award Number: 1333ND23PNB680350
Award Date: 08/09/2023
Description: Justification attached per FAR 6.305
Web Link: SAM.gov Permalink
(https://sam.gov/opp/c32e473ff46944828b2c405e595ab913/view)
Place of Performance: Address: Gaithersburg, MD 20899, USA; Zip Code: 20899; Country: USA
Record: SN06782524-F 20230811/230809230045 (samdaily.us)
Source: SAM.gov Link to This Notice
(may not be valid after Archive Date)

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