SPECIAL NOTICE
A -- Technology for Nitrogen-Polar Gallium Nitride: Epiwafers & Substrates (ECLIPSE) (S2MARTS)
- Notice Date
- 8/25/2022 7:57:53 AM
- Notice Type
- Special Notice
- NAICS
- 334413
— Semiconductor and Related Device Manufacturing
- Contracting Office
- NSWC CRANE CRANE IN 47522-5001 USA
- ZIP Code
- 47522-5001
- Solicitation Number
- N0016422SNB86
- Response Due
- 10/7/2022 10:59:00 AM
- Archive Date
- 11/24/2022
- Point of Contact
- Jolynn Slaven, Phone: 8128548466, Jason Clark, Phone: 8128543320
- E-Mail Address
-
Jolynn.s.slaven.civ@us.navy.mil, jason.j.clark26.civ@us.navy.mil
(Jolynn.s.slaven.civ@us.navy.mil, jason.j.clark26.civ@us.navy.mil)
- Description
- Special Notice N0016422SNB86 Agency:� Department of the Navy Office:� Naval Sea Systems Command Location:� NSWC Crane Division Classification Code:� AC33 � National Defense R&D Services; Defense-Related Activities; Experimental Development NAICS Code:� 334413 � Semiconductor and Related Device Manufacturing Response Due Date:� 7 October 2022 ����������� 13:59 EDT Request for Solutions: Technology for Nitrogen-Polar Gallium Nitride: Epiwafers & Substrates (ECLIPSE) (S2MARTS) �PURPOSE This Request for Solutions (RFS) is issued to seek innovative solutions for a prototype that demonstrate Technology for Nitrogen-Polar Gallium Nitride: Epiwafers & Substrates (ECLIPSE).� The Government will evaluate the solutions with the intent of awarding an Other Transaction Agreement (OTA) in accordance with 10 U.S. Code � 2371b.� � BACKGROUND AND SUMMARY S2MARTS Vendors interested in responding to this RFS must be members of the Strategic & Spectrum Missions Advanced Resilient Trusted Systems (S2MARTS) consortium. Interested parties may visit S2MARTS.org for membership information. This project will be managed by a Naval Surface Warfare Center, Crane Division Project Manager. � PROJECT OVERVIEW State-of-the-art (SOTA) radio frequency (RF) material is a key technological enabler for millimeter wave (mmW) applications, such as fifth generation (5G) communications, satellite communications (satcom), electronic warfare (EW), and radio detection and ranging (radar). In order to maintain leadership in RF microelectronics, the United States (US) Department of Defense (DoD) and Defense Industrial Base (DIB) requires access to mature domestic sources of superior semiconductor materials. The Office of the Undersecretary of Defense, Research & Engineering (OUSD(R&E))�s Trusted & Assured Microelectronics program is seeking prototypes that (1) mature the manufacturing of 100mm and 150mm N-Polar GaN epiwafers and off-axis semi-insulating SiC substrates, (2) capture foundry requirements for N-Polar GaN transistors and inform N-Polar GaN material maturation specifications, and (3) author and begin execution of N-Polar transistor and MMIC maturation plans. Key program objectives are as follows: (1) ensure repeatability and reproducibility, (2) understand and improve yield, and (3) exercise N-Polar GaN supply chain segments for substrates, epiwafers, and device fabrication. If you plan to submit a solution for this opportunity, your organization must be certified through the Joint Certification Program. You must submit a DD Form 2345 through the Joint Certification Program in order to view and to submit a proposal. Please visit the S2MARTS website at https://s2marts.org/ to review the full RFS. Contracting Office Address: 300 Hwy 361 Crane, IN 47522 United States Primary Point of Contact.: Jolynn Slaven Jolynn.s.slaven.civ@us.navy.mil Phone: 812-854-8466 Secondary Point of Contact: Jason Clark Jason.j.clark26.civ@us.navy.mil Phone: 812-854-3320
- Web Link
-
SAM.gov Permalink
(https://sam.gov/opp/a93a9ed6e669447bba959df3177d067c/view)
- Record
- SN06440420-F 20220827/220825230122 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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