SPECIAL NOTICE
99 -- TECHNOLOGY TRANSFER OPPORTUNITY: Nanostructure-Based Vacuum Channel Transistor (TOP2-174)
- Notice Date
- 12/11/2020 1:58:51 PM
- Notice Type
- Special Notice
- NAICS
- 927110
— Space Research and Technology
- Contracting Office
- NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
- ZIP Code
- 00000
- Solicitation Number
- T2P-ARC-00064
- Response Due
- 12/11/2021 2:00:00 PM
- Archive Date
- 12/26/2021
- Point of Contact
- NASA�s Technology Transfer Program
- E-Mail Address
-
Agency-Patent-Licensing@mail.nasa.gov
(Agency-Patent-Licensing@mail.nasa.gov)
- Description
- NASA�s Technology Transfer Program solicits inquiries from companies interested in obtaining license rights to commercialize, manufacture and market the following technology. License rights may be issued on an exclusive or nonexclusive basis and may include specific fields of use. NASA provides no funding in conjunction with these potential licenses. THE TECHNOLOGY: NASA has a patent on a unique gate insulated vacuum channel transistor. The vacuum transistor is created using standard silicon semiconductor processing. This is done by etching a tiny cavity in phosphorous doped silicon, bordered by three electrodes; a source, a gate, and a drain. The source and drain are separated by 150 nanometer (nm), with the gate on top. Electrons are emitted from the source due to a voltage applied across it and the drain, while the gate controls the electron flow across the cavity. When the gap between the source and drain is of the order of 150nm the electrons do not collide. The mean free path of the electrons (the average length an electron can travel before hitting something) is more than 1micrometer (m). Advantages of the vacuum tube and transistor are combined here through nanofabrication. A photoresist ashing technique enables a nanogap separation of the emitter and the collector, thus allowing operation at less than 10V. This allows high frequency and power output while satisfying the metrics of lightness, cost, lifetime, and stability at harsh conditions. The operation voltage can be decreased comparable to modern semiconductor devices. To express interest in this opportunity, please submit a license application through NASA�s Automated Technology Licensing Application System (ATLAS) by visiting https://technology.nasa.gov/patent/TOP2-174 If you have any questions, please e-mail NASA�s Technology Transfer Program at Agency-Patent-Licensing@mail.nasa.gov with the title of this Technology Transfer Opportunity as listed in this beta.SAM.gov notice and your preferred contact information. For more information about licensing other NASA-developed technologies, please visit the NASA Technology Transfer Portal at https://technology.nasa.gov/ These responses are provided to members of NASA�s Technology Transfer Program for the purpose of promoting public awareness of NASA-developed technology products, and conducting preliminary market research to determine public interest in and potential for future licensing opportunities. No follow-on procurement is expected to result from responses to this Notice.
- Web Link
-
SAM.gov Permalink
(https://beta.sam.gov/opp/9842fdd78e02463fadbb36af2aeefb3f/view)
- Record
- SN05872073-F 20201213/201211230139 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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