SPECIAL NOTICE
A -- Topological Excitations in Electronics (TEXITRONICS) Request for Information (RFI) - DARPA-SN-17-26
- Notice Date
- 2/8/2017
- Notice Type
- Special Notice
- NAICS
- 541712
— Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
- Contracting Office
- Other Defense Agencies, Defense Advanced Research Projects Agency, Contracts Management Office, 675 North Randolph Street, Arlington, Virginia, 22203-2114, United States
- ZIP Code
- 22203-2114
- Solicitation Number
- DARPA-SN-17-26
- Archive Date
- 3/3/2017
- Point of Contact
- R. Ale Lukaszew, Ph.D.,
- E-Mail Address
-
DARPA-SN-17-26@darpa.mil
(DARPA-SN-17-26@darpa.mil)
- Small Business Set-Aside
- N/A
- Description
- DARPA-SN-17-26 TEXITRONICS RFI The Defense Advanced Research Projects Agency (DARPA) Defense Sciences Office (DSO) is requesting information on t opological ex citations i n elec tronics (TEXITRONICS). Topology deals with properties of spaces that are invariant under smooth deformations and it provides newly appreciated mathematical tools in condensed matter physics that are currently revolutionizing the field of quantum matter and materials. Topological invariance, often protected by discrete symmetries, provides some robustness that motivates the search and discovery of new topological matter and excitations. This entails discovery and development of materials, whose inherent properties can enable new devices for which fundamental theory, modeling, design, engineering, and fabrication processes addressing Department of Defense (DoD) needs will be required. Achieving these goals will require material modeling, fabrication and characterization as well as integration and optimization within prototype devices. It is expected that achieving these goals will require the application of multiple degrees of freedom across scale and across materials and device boundaries. Possible degrees of freedom include, but are not limited to the following: new crystal compositions and structures; nano-composites; novel superlattice structures; materials with nanostructures and patterns; nanocrystals; and quantum surfaces, wires and dots. It is envisioned that the design of these excitations and concomitant devices will require multiscale predictive modeling tools leveraging modern computational resources. For example, achieving optimal device performance may require a deeper understanding of carrier transport properties for complex materials and device structures. It will be necessary to advance the state of the art in many-body theory and ab initio modeling to address complex engineered surfaces and interfaces used in these materials and structures. Additionally, new modeling and simulation tools that integrate across scale and across modalities may need to be developed in order to engineer the desired properties of dynamic real world devices. Approaches might also involve semi-empirical models that rely upon a tight coupling with experimental measurements in order to achieve computational efficiencies, elucidate parametric dependencies, and accelerate the design-fabrication-validation cycle. See DARPA-SN-17-26.
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/spg/ODA/DARPA/CMO/DARPA-SN-17-26/listing.html)
- Record
- SN04396234-W 20170210/170208235012-e70beb5965e183a16917bd6bd81038b1 (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
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