SOLICITATION NOTICE
A -- Integrity and Reliability of Integrated CircuitS (IRIS), Phase III - DARPA-BAA-15-47 document
- Notice Date
- 7/17/2015
- Notice Type
- Presolicitation
- NAICS
- 541712
— Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
- Contracting Office
- Other Defense Agencies, Defense Advanced Research Projects Agency, Contracts Management Office, 675 North Randolph Street, Arlington, Virginia, 22203-2114, United States
- ZIP Code
- 22203-2114
- Solicitation Number
- DARPA-BAA-15-47
- Archive Date
- 3/4/2016
- Point of Contact
- Mr. Kerry Bernstein,
- E-Mail Address
-
DARPA-BAA-15-47@darpa.mil
(DARPA-BAA-15-47@darpa.mil)
- Small Business Set-Aside
- N/A
- Description
- DARPA-BAA-15-47, Attachment 1: Proposer Checklist DARPA-BAA-15-47 document DARPA is soliciting research proposals for a comprehensive exploration of the effects of extreme physical stresses on wear-out and aging mechanisms in CMOS FETs at 28nm and/or 14nm lithography node. The objective of the IRIS Program Phase III is to explore aging effects in both transistors and transistor interconnects to create predictive models and to test how precisely and rapidly specific wear-out mechanisms can be asserted, for the purposes of accelerating burn-in, aging, and wear-out. See the full DARPA-BAA-15-47 document attached.
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/spg/ODA/DARPA/CMO/DARPA-BAA-15-47/listing.html)
- Record
- SN03801146-W 20150719/150717234848-c6aba0cc858f262fca9e4c06dbddcf9a (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
(may not be valid after Archive Date)
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