MODIFICATION
B -- Experimental Semiconductor Scientist
- Notice Date
- 3/24/2015
- Notice Type
- Modification/Amendment
- NAICS
- 541712
— Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
- Contracting Office
- Department of the Air Force, Air Force Materiel Command, AFLCMC/PZIO - WPAFB, 1940 ALLBROOK DRIVE, WRIGHT-PATTERSON AFB, Ohio, 45433-5309, United States
- ZIP Code
- 45433-5309
- Solicitation Number
- FA8601-15-T-0137
- Point of Contact
- Jillian Kovacs, Phone: 9375224608
- E-Mail Address
-
jillian.kovacs@us.af.mil
(jillian.kovacs@us.af.mil)
- Small Business Set-Aside
- N/A
- Description
- SOURCES SOUGHT SYNOPSIS AMENDMENT (Not a Notice of Solicitation) The United States Air Force, LCMC/Operational Contracting Division, Wright-Patterson AFB, Ohio is seeking potential sources, including small business (SB), 8(a), HUBZone, and Service-Disabled Veteran-Owned small businesses, that are capable of providing a part-time Experimental Semiconductor Scientist. Firms responding shall specify that they are able to provide an individual that meets the specifications provided below and provide detailed information to show clear technical compliance. The specific technical requirements are as follows: A part-time experimental Semiconductor Scientist to perform research in the areas of optical and electrical characterization studies for the purpose of producing new direct narrow bandgap semiconductors of Ge 1-x-y Si x Sn y and Ge 1-y Sn y using the infrared (IR) Photoluminescence and Deep Level Transient Spectroscopy (DLTS) measurement methods. The researcher's objective will be to develop a research program studying possible direct narrow bandgap semiconductors such as Ge 1-x-y Si x Sn y and Ge 1-y Sn y, which can be used in the next generation IR optoelectronic devices. In this work, the researcher will characterize the optical properties of the Ge 1-x-y Si x Sn y and Ge 1-y Sn y epilayers as functions of composition x and y and temperature using the infrared Photoluminescence measurement method. They will also need to be able to characterize deep level defects in those narrow bandgap semiconductors. The important parameters to be obtained from these narrow bandgap Ge 1-x-y Si x Sn y and Ge 1-y Sn y materials include IR optical transition, bandgap energy, as-grown native and/or thermally induced deep level defect energy levels, trap concentrations, and capture cross sections, all of which are vital information to an IR device design and fabrication. T he se studies must lead to the successful application for a new class of IR optoelectronic devices such as light emitting sources and detectors operating at long wavelengths in the infrared range, all of which can be used in various Air Force technical systems. Due to the nature of very specialized proposed research work, it is strongly required that the researcher must have direct hands-on experience for at least three months of full time work equivalent in the infrared Photoluminescence and Deep Level Transient Spectroscopy measurements for the narrow bandgap semiconductors of Ge 1-x-y Si x Sn y and Ge 1-y Sn y up to the extent that the researcher could take and analyze meaningful data independently after introduction of the AFIT's experimental set-up and reasonable initial training of a week. The researcher 's direct experience and ability on the proposed research task must be backed up by either his/her publication records, thesis work, and/or expert's opinion letter. The researcher must have two or more years of direct research experience in the areas stated above beyond a PhD degree. The experimental work will be performed on site at the Department of Engineering Physics, Graduate School of Engineering and Management, Air Force Institute of Technology, Wright Patterson AFB, OH. All interested firms shall submit a response demonstrating their capabilities to provide the requested service to the Primary Point of Contact listed below. As stipulated in FAR 15.201, responses to this notice are not considered offers and cannot be accepted by the Government to form a binding contract. No solicitation exists; therefore, do not request a copy of the solicitation. The decision to solicit for a contract shall be solely within the Government's discretion. If applicable, firms responding should indicate socio-economic status (SB, 8(a), HUBzone, SDVO). Also indicate if you are the firm who could provide this service, or provide the name of the firm you will be utilizing. Respondents are further requested to indicate their status as a Foreign-owned/foreign-controlled firm and any contemplated us of foreign national employees on this effort. The Government reserves the right to consider a small business set-aside based upon responses hereto for any subsequent acquisition. Any information submitted by respondents to this sources sought synopsis is voluntary. This sources sought notice is not to be construed as a commitment by the Government, nor will the Government reimburse any costs associated with the submission of information in response to this notice. Respondents will not be individually notified of the results of any government assessments. The Government's evaluation of the capability statements received will factor into whether any forthcoming solicitation will be conducted as a full and open competition or as a set-aside for small businesses, or any particular small business designation (e.g. SDVOSB, HUBZone, 8(a), SDB, WOSB, VOSB, etc.). Capabilities package : All interested firms shall submit a capabilities package that explicitly demonstrates company capabilities such as; previous examples of performing this service. Responses may be submitted electronically to the following e-mail address: jillian.kovacs@us.af.mil in a Microsoft word compatible format or mailed to AFLCMC/PKOAA POC: Jillian Kovacs, 1940 Allbrook Dr., Rm 109, Wright-Patterson AFB, OH 45433-5309 to be received no later than 12:00 PM Eastern Standard Time, 27 March 2015. Direct all questions concerning this acquisition to Jillian Kovacs at jillian.kovacs@us.af.mil.
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/spg/USAF/AFMC/88 CONS/FA8601-15-T-0137/listing.html)
- Place of Performance
- Address: Air Force Institute Of Technology, Wright Patterson AFB, Ohio, 45433, United States
- Zip Code: 45433
- Zip Code: 45433
- Record
- SN03677576-W 20150326/150324235401-9ecb4ff57e600e29c25d01f372f53b3f (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
(may not be valid after Archive Date)
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