MODIFICATION
A -- Special Notice: SILICON CARBIDE LOW COST POWER SWITCHES (LCPS)
- Notice Date
- 2/18/2014
- Notice Type
- Modification/Amendment
- NAICS
- 541712
— Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
- Contracting Office
- ACC-APG - RTP, ATTN: CCAP-SCR, Research Triangle Park Contracting Division, P.O. Box 12211, Research Triangle Park, NC 27709-2211
- ZIP Code
- 27709-2211
- Solicitation Number
- W911NF12R0011
- Archive Date
- 2/18/2015
- Point of Contact
- Kathryn McManus, 919-541-5036
- E-Mail Address
-
ACC-APG - RTP
(kathryn.e.mcmanus.civ@mail.mil)
- Small Business Set-Aside
- N/A
- Description
- This is a combined synopsis/solicitation for an applied research effort. This announcement constitutes the only solicitation; proposals are being requested and a written solicitation will not be issued. SILICON CARBIDE LOW COST POWER SWITCHES (LCPS) The Silicon Carbide (SiC) Low Cost Power Switches (LCPS) program is an applied research effort focused on device designs and associated high yield device fabrication processes that will ultimately provide a path to low cost commercial production of SiC power switches. Further, this effort is focused on the virtual foundry architecture that is beginning to be adopted by design houses that are utilizing excess capacity in existing silicon foundries for most of the SiC device processing and implementing any custom processes not available at the Si foundry in their respective labs. SiC is an emerging power semiconductor material that has electrical, thermal, and mechanical properties that allow it to far surpass the performance of conventional silicon (Si) power technology and make it the prime candidate for next-generation high-temperature high-frequency switching devices for military, as well as commercial, applications. Proof-of-concept, SiC high-voltage power devices have been demonstrated to provide greater than twice the power density of Si power devices and at 3X greater efficiency. But the cost of the SiC power devices is still too high for wide-spread penetration into commercial device applications. This program endeavors to advance the United States' capability to provide SiC high-power density, high-temperature, and high-efficiency power semiconductor switches; to identify limitations in device design and fabrication processes that must be overcome to provide lower cost reliable SiC power devices; to work with Si foundries to take advantage of current low-cost commercial power device processing to enhance wide-spread commercialization of SiC power devices. Technology limitations/gaps identified by this program may be the focus of more sustained development efforts in the future. The U.S. Army Contracting Command - Aberdeen Proving Ground, Research Triangle Park Division, on behalf of the U.S. Army Research Laboratory, Sensors and Electron Devices Directorate (SEDD) is soliciting proposals for the SiC LCPS program under Topic 1.4.3, quote mark Wide Band-Gap Power Devices, quote mark of the ARL Core Broad Agency Announcement (BAA) for Basic and Applied Scientific Research for Fiscal Years 2012 through 2017 at W911NF-12-R-0011. Solutions are sought for the development of SiC power MOSFET semiconductor switches with single die blocking voltage and current ratings of greater than 1.2 kV and greater than 10 A, respectively, with specific on-resistances as low as 2.5 m -cm2, and with a unit cost of less than $0.25/A. These switches should be capable of reliable operation at a junction temperature of 200 C. Since the LCPS program goals should align well with the proposer(s) future SiC MOSFET commercial applications, it is expected that the Recipient will include matching funds of no less than 25% in their proposal plans. There will be no equipment purchases using federal funds associated with awards made as a result of this announcement. Funding is currently available for the award of up to two cooperative agreements related to the SiC LCPS program. While the BAA and Topic remain open for proposal submission until, 31 March 2017, in order to be eligible for the agreement to be awarded with the available funding, proposals must be received in accordance with the due dates and instructions provided in this announcement. It is anticipated that up to two quote mark cooperative agreements quote mark (31 USC 6305) will be awarded, pursuant to 10 USC 2358 Research Projects, each with a period of performance between twelve and eighteen months. The total amount available for the SiC LCPS program is approximately $3,000,000.00. The principal purpose of the cooperative agreements is for the public purpose of the support and stimulation of fundamental research and not the acquisition of property or provision of services for the direct benefit or use of the Government. The Recipient of the cooperative agreements will work collaboratively with scientists from ARL to further the SiC LCPS program. ARL will participate in the research and use its strong in-house technical expertise to jointly plan and execute the research program with the Recipient. ARL will evaluate the fabricated power devices to Army-specific circuit stresses and analyze the devices' electrical and physical response. These analyses and supporting data will be shared with the Recipient and ways to augment the device design, process and or starting material to improve performance will be jointly determined. ARL's Device Reliability Physics, Pulse Switches and Circuit teams will participate in this collaboration. In order to be eligible for the cooperative agreements to be awarded with the available funding for this program, offerors are to submit proposals in accordance with the submissions instructions under BAA W911NF-12-R-0011 no later than 17 March 2014 at 11:59 PM (EST). Proposals will be evaluated using the criteria listed in the BAA. Any Questions concerning this announcement shall be directed to Charles Scozzie by email: charles.j.scozzie.civ@mail.mil. This special notice expires on 17 March 2014 at 11:59 PM (EST). The full BAA is posted on Grants.gov
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