SOLICITATION NOTICE
66 -- Deep Reactive Ion Etching (DRIE) System
- Notice Date
- 8/22/2012
- Notice Type
- Combined Synopsis/Solicitation
- NAICS
- 333295
— Semiconductor Machinery Manufacturing
- Contracting Office
- N00174 NAVAL SURFACE WARFARE CENTER, MARYLAND 4072 North Jackson Road Suite 132 Indian Head, MD
- ZIP Code
- 00000
- Solicitation Number
- N0017412R0035
- Response Due
- 9/24/2012
- Archive Date
- 10/9/2012
- Point of Contact
- Karen Tindley 301-744-6385
- E-Mail Address
-
karen.tindley@navy.mil
(karen.tindley@navy.mil)
- Small Business Set-Aside
- Total Small Business
- Description
- This is a combined synopsis/solicitation for commercial items prepared in accordance with the format in Federal Acquisition Regulations (FAR) Subpart 12.6, as supplemented with additional information included in this notice. This announcement constitutes the only solicitation; proposals are being requested, but a written solicitation will not be issued. This solicitation, N00174-12-R-0035, is issued as a Request for a Proposal (RFP). This solicitation document and incorporated provisions and clauses are those in effect through Federal Acquisition Circular (FAC) 2005-55 and the Defense Federal Acquisition Regulation Supplement (DFARS) Publication Notice 20120130. The North American Classification System Code is 333295 and the small business size standard is 500 employees. This acquisition is a 100% small business set-aside. Naval Surface Warfare Center Indian Head Division (NSWC IHD) has a requirement for Deep Reactive Ion Etching (DRIE) System in accordance with Salient Characteristics included in this combined synopsis/solicitation; Attachment 1 Past Performance Questionnaire and Attachment 2 Addendum Clauses in Full Text are provided. Delivery and acceptance is at NSWC IHD, Indian Head, MD 20640, and FOB Destination. Delivery shall be no later than five (5) months from the date of contract award. Contract shall be awarded on a Standard Form 1449 Contract for Commercial Items as a Firm Fixed Priced contract. Salient Characteristics for the Deep Reactive Ion Etching (DRIE) System GENERAL SPECIFICATIONS: The system should be capable of performing deep silicon etching (DSE) of silicon substrates utilizing Bosch process-based deep reactive ion etching (DRIE.) The system should be capable of loading and processing 4 and 6 substrates (either in a permanent configuration or with any necessary wafer conversion kit included.) The system shall include a separate module for wafer loading (load lock) so that the DSE chamber can remain isolated from the outside atmosphere. The load lock can be a single wafer-based system or a multiple wafer, cassette-based system. All etching parameters must be programmable and automated including temperature, gas pressure, gas flow rate, RF power, etc. The DRIE system shall include all hardware and software components required for operation, including gas cabinets, vacuum pumps, RF generators, wafer loader, etch chamber, power distribution components, control PCs, etc. The manufacturer shall be able to provide performance reports (i.e. technical articles, references) for the proposed machine to demonstrate a proven track record in DSE for micro electromechanical systems (MEMS) applications. MANDATORY MINIMUM PERFORMANCE SPECIFICATIONS: 1.System shall include all hardware and software components required for turn- key operation, including gas cabinet(s), vacuum pump(s), RF generator(s), wafer loader, etch chamber, power distribution, control PC(s), etc. 2.User interface must be performed by a Windows-based computer. The computer must include Windows 7 or be upgradable to Windows 7 in the future. All included software should be fully compatible with Windows 7. 3.System must include at least one deep silicon etching (DSE) process chamber utilizing Bosch process-based deep reactive ion etching (DRIE.) 4.Wafer loading a.Must include a separate module for wafer loading (load lock) so that the DSE chamber can remain isolated from the outside atmosphere. b. Load lock can be a single wafer-based system or a multiple wafer, cassette-based system. 5.System must include separate, dedicated vacuum pumps for the load lock and process chambers. 6.Wafer compatibility a.Must be capable of processing solid silicon and silicon-on-insulator (SOI) wafers. b.Load lock and DSE chamber must be capable of processing 100 mm and 150 mm diameter wafers. It is acceptable to accomplish this with multiple fixtures that are swapped as necessary. All necessary components must be supplied. c.Must be compatible with wafers from 50 microns to 1200 microns thick. 7.Etch programming, automation, and control a.All etching parameters must be programmable and automated including temperature, gas pressure, gas flow rate, RF power, etc. b.Etch programs shall be capable of changing etch parameters vs. time during the etch process to control features such as sidewall scalloping and notching at an SOI interface. 8.System shall be capable of silicon etch rates from 1 micron/minute to at least 10 microns/minute. 9.DSE chamber wafer chuck a.Wafer must be held by electrostatic means (mechanical clamp not acceptable.) b.Backside of wafer (opposite of surface being etched) must be helium cooled. 10.System must include an end point detection system to automatically stop the silicon etch when pre-determined parameters are met. 11.Proposal shall include on-site system final utility hook-up, start-up, qualification testing and acceptance, and user training to be performed by vendor. 12.System shall include a spare parts kit for common consumables and wear items such as o-rings and gaskets. 13.System shall include documentation (installation, operation, maintenance, etc.) in bound form and/or on CD-ROM. INSTRUCTIONS, CONDITIONS AND NOTICE TO OFFERORS: The Government will award a contract resulting from this solicitation to the responsible offeror whose offer conforming to the combined synopsis/solicitation will be the lowest price technically acceptable offer. All technical factors must be met to be considered acceptable. The following factors shall be used to evaluate offers: (1) Technical Capability of the items and services offered to meet the minimum needs of the Government based on examination of either product literature or technical approach narrative, (2) Past Performance and (3) Price. Volume I: Factor 1: Technical Capability Volume II: Factor 2: Past Performance Volume III: Factor 3: Price Volume IV: Factor 4: Cover Letter/Firm Fixed Priced Proposal The Offeror shall submit the following information. Failure to do so will render an offer ineligible for award. 1.Four (4) copies of the Technical Volume. 2.One (1) copy of Past Performance 3.One (1) copy of the Price Volume Volume I - FACTOR 1: TECHNICAL CAPABILITY (Not to Exceed 5 pages) The Offeror shall describe, in detail, how it will meet the requirements of the Salient Characteristics for each of the Deep Reactive Ion Etching (DRIE) system. General statements, that the Offeror can or will comply with the requirements, that standard procedures will be used, that well known techniques will be used, or that paraphrases the solicitation s Salient Characteristics in whole or in part, will not constitute compliance with the mandatory requirements concerning the content of the Technical proposal. The Offeror shall respond with a line-by-line response attesting to full compliance to each item listed under the mandatory minimum performance requirements as outlined in each of the Salient Characteristics. NO PRICING IS TO BE PROVIDED IN THE TECHNICAL INFORMATION. The Government will determine the Offeror s Technical evaluation on an acceptable/unacceptable basis. In order for the technical proposal to be considered acceptable it must meet all the technical criteria. Volume II - FACTOR 2: PAST PERFORMANCE Past performance information shall be provided in order to develop an offeror s past performance rating. Past performance information is one indicator of an Offeror s ability to perform the contract successfully. In the evaluation of an Offeror s past performance, the Government reserves the right to use any information concerning relevant performance within the past three years. Relevant and timely past performance information such as Contractor Performance Assessment Reporting System (CPARS), Product Data Reporting and Evaluation Program (PDREP) and the Past Performance Information Retrieval System (PPIRS) (http://www.ppirs.gov/) including the Federal Awardee Performance and Integrity Information System (FAPIIS) will be considered during the evaluation of an Offeror s past performance. Using the Past Performance Questionaire (Attachment 1 ), the Offeror shall provide a list of three (3) references. The identified relevant contracts shall focus on performance that is relevant to the current solicitation requirement. Common aspects of relevancy include similarity of supply/support, complexity and dollar value. The past performance questionnaire should be e-mailed to: karen.tindley@navy.mil no later than then closing date of the solicitation. The Government will review past performance information provided by the Offeror as well as any past performance information available to the Government to determine the Past Performance rating of the offeror. If the offeror has no relevant past performance, the offeror shall make this statement on Attachment. Volume III - FACTOR 3: PRICE The Offeror shall provide pricing to include any documentation, warranty, training and delivery charges. Failure to address any of the instructions within this combined synopsis/solicitation may result in a proposal being considered unacceptable. Intent is to award based on initial offers. If considered necessary by the Contracting Officer, discussions will be conducted only with those offerors determined to have a reasonable chance for award. Volume IV FACTOR 4: Cover Letter/Firm Fixed Priced Proposal The Offeror shall submit a cover letter which includes consent and agreement to provide for the requirements of the Salient Characteristics, training, standard commercial warranty, delivery/installation at NSWC Indian Head and all applicable clauses/attachments of this combined synopsis/solicitation. The cover letter shall also provide the following information: N00174-12-R-0035 Deep Reactive Ion Etching (DRIE) System (Please provide a quote for line items below, valid through 30 October 2012) ITEMDESCRIPTIONQTYUNITTOTAL PRICE 0001Deep Reactive Ion Etching (DRIE) System in accordance with Salient Characteristics to include F.O.B delivery installation and a 12 month warranty from date of acceptance. 1 Each $_________ 0002Training to be performed 30 days after installation for 3 people for 2 days. 1 LOT $__________ 0003Operator Manual or CD 1 LOT NSP TOTAL PRICE $_________ *NSP Not Separately Priced FOB: DESTINATION Payment Terms: Delivery Date: 5 months after contract award Please provide the information below: Company Name: DUNS #: Cage Code: Point of Contact: Contact Number: Email Address: Tax ID #: Offeror shall complete the following electronic annual Representations and Certifications via the Online Representations and Certifications Application (ORCA) at https://orca.bpn.gov/ in conjunction with required registration in the Central Contractor Registration (CCR) database: FAR 52.212-3 ALT I Offeror Representations and Certifications--Commercial Items and DFARS 252.212-7000 Offeror Representations and Certifications--Commercial Items. SELECTION METHODOLOGY FAR 52.212-2 -- Evaluation -- Commercial Items. Failure to address any of the instructions within this combined synopsis/solicitation may result in a proposal being considered unacceptable. The Government intends to award a contract resulting from this solicitation to the responsible offeror whose proposed quote represents the lowest priced offer with acceptable technical and past performance proposals. A neutral past performance rating will not disqualify an Offeror. Past performance evaluations will not be performed on offeror s whose technical proposals are unacceptable. All requirements set forth in this solicitation and its attachments must be met for a technical proposal to be determined Acceptable . Intent is to award based on initial offers. If considered necessary by the Contracting Officer, discussions will be conducted only with those offerors determined to have a reasonable chance for award. The provision at 52.212-1, Instructions to Offerors-Commercial, applies to this acquisition. The clause at FAR 52.212-4, Contract Terms and Conditions-Commercial Items and FAR 52.212-5, Contract Terms and Conditions Required to Implement Statutes or Executive Orders--Commercial Items, applies to this acquisition. The additional clauses cited within this clause are applicable: 52.203-6, 52.204-10, 52.209-6, 52.209-10, 52.219-6, 52.219-8, 52.219-13, 52.219-14, 52.219-28, 52.222-3, 52.222-19, 52.222-21, 52.222-26, 52.222-35, 52.222-36, 52.222-37, 52.222-40 and 52.223-18. The DFARS clause at 252.212-7001, Contract Terms and Conditions Required to Implement Statutes or Executive Orders Applicable to Defense Acquisitions of Commercial Items applies to this acquisition. The additional clauses cited within this clause are applicable: 52.203-3, 252.203-7000, 525-219-7003, 252.225-7001, 252.225-7012, 252.232-7003, 252.243-7002, 252.247-7023, and 252.246-7004. Any resultant contract will be DO Rated under the Defense Priorities and Allocations System (DPAS). List of Attachments- Attachment (1) Past Performance Questionnaire and Attachment (2) Addendum Clauses to 52.212-4. 7. Proposals shall be submitted by email to karen.tindley@navy.mil. Proposals shall include a completed copy of FAR 52.212-3 and DFARS 252.212-7000 with proposals unless the vendor is registered in ORCA (http://orca.bpn.gov). If registered, state this on your proposal and affirm your Representations and Certifications are up to date. All proposals must be received no later than 1700 Eastern Standard Time, 24 September 2012. It is the responsibility of the contractor to be familiar with the applicable clauses and provisions which may be accessed in full text at these addresses: https://www.acquisition.gov/Far/ http://www.acq.osd.mil/dpap/dars/dfarspgi/current/index.html.
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