MODIFICATION
59 -- Single Crystal GaN Substrates
- Notice Date
- 3/9/2012
- Notice Type
- Modification/Amendment
- NAICS
- 334413
— Semiconductor and Related Device Manufacturing
- Contracting Office
- Department of the Navy, Office of Naval Research, Naval Research Laboratory/Supply, 4555 Overlook Ave S.W., Washington, District of Columbia, 20375
- ZIP Code
- 20375
- Solicitation Number
- N00173-12-Q-0125
- Archive Date
- 4/13/2012
- Point of Contact
- Paul Gilroy, Phone: 202-767-1995
- E-Mail Address
-
Paul.Gilroy@nrl.navy.mil
(Paul.Gilroy@nrl.navy.mil)
- Small Business Set-Aside
- N/A
- Description
- The technical requirements are: •1. FWHM rocking curve 20-40 arcsec, or better •2. Wafer bow ≤10 µm, or better •3. EPD ~ 10 4 /cm 2, or better •4. Controlled electrical conductivity, as specified in the PR sheets. •5. Semi insulator, no iron doping •6. Surface ready for epitaxial growth, RMS <0.5 nm, or better •7. Optical finishing, RMS <3 nm, or better •8. Crystalline orientation, c-, a-, and m-plane. Bulk GaN wafer specifications 1. True single crystal, single domain, no columnar growth and no grain boundaries 2. Crystal curvature radius (c-plane): tens of meters to 100 m, or better 3. FWHM of X-ray rocking curve (100 µm x 100 µm slits), 20-40 arcsec or smaller 4. Dislocation density: 5x10 4 /cm 2 or lower. 5. Surface finishing: Optical polishes (RMS < 3 nm, or smaller) and Epi-ready (<0.5 nm or smaller) 6. Geometrical bow of wafer surface: 10 µm or smaller 7. High-carrier concentration wafer: ~10 19 /cm 3, mobility ~150 cm 2 /V·s 8. Low-carrier concentration wafer: ~ 3x10 17 /cm 3, mobility ~10 19 /cm 3, mobility ~250 cm 2 /V·s 9. Semi-insulating: Resistivity 10 9 -10 12 Ω·cm, no iron (Fe) doping. All the specifications listed above must be supported with experimental data provided with proposal
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/spg/DON/ONR/3400/N00173-12-Q-0125/listing.html)
- Record
- SN02693202-W 20120311/120309235109-5ba9fa9664fc248e49895b36450bc505 (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
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