SOLICITATION NOTICE
66 -- LINEAR EUV DETECTOR ARRARYS
- Notice Date
- 7/20/2009
- Notice Type
- Presolicitation
- NAICS
- 334413
— Semiconductor and Related Device Manufacturing
- Contracting Office
- NASA/Goddard Space Flight Center, Code 210.M, Greenbelt, MD 20771
- ZIP Code
- 20771
- Solicitation Number
- NNG092303204L
- Response Due
- 8/4/2009
- Archive Date
- 7/20/2010
- Point of Contact
- Rogenia Burton-Pendergast, Simplified Acquisition Specialist, Phone 301-286-7587, Fax 301-286-1720, Email Rogenia.M.Burton-Penderga@nasa.gov - Eric Jackson Newman, Contracting Officer, Phone 301-286-1892, Fax 301-286-1720, Email Eric.J.Newman@nasa.gov<br />
- E-Mail Address
-
Rogenia Burton-Pendergast
(Rogenia.M.Burton-Penderga@nasa.gov)
- Small Business Set-Aside
- Total Small Business
- Description
- NASA/GSFC has a requirement for three(3) 1 X 16 linear EUV detector arrarys withthe following specifications:-Wavelength Range:17-135 amPhotodiodes:(a) 16 active diodes + 4 "dark" diodes (b)2 diodes at each end are dark diodes(c)electrically isolated cathodes with common anodes(d)electrons are injected into front end of ASIC-Spacing of Photodiodes:0.75 mm-Active Area per Diode: 0.65 mm x 15mm-Package Area: 30 mm x 30 mm Custom kovar package for vacuum interface-Package Pins 20 pins - tic diode anodes together (to ground a14 pins)-Diode Alignment: &lt;0.1 mmplacement into package-Window/Filter Coating: None/None (except for the end diodes)-SiC Diode Type: Pt/4H-SiC & Ni/4H-SiC Schottky photodiodes-Temp. Stability: &lt;0.3%/C-Long-term Stability: &lt;5% / 2000 J-Shunt Resistance: (@20C) &gt; 3000 MOhm-Dark Current: (@20C) &lt;2fA at 1 Hz-Capacitance: &lt;1 nF-Uniformity: &lt;2% variation over active area-Responsivity:Q.E. @ 120nm &gt; 13% and Responsivity &gt; 0.013 A/W-Temp. Operation: 10 to 30C -Survival Temp. -50 to 50C -Contamination: NVR of A/2 (50 A) per MIL-STD 1246C-Wiring: Redundant wire bonds between diodes and package pins-Delivery Schedule: &lt;6 monthsCustom microfabrication and device testing services are required for fabrication of EUVsilicion carbide detector arrays for GOES-R EUV instrument development. NASA/GSFC intends to purchase the items from United Silicion Carbide, Inc. as they arethe only company capable of meeting the very strigent design and performancespecifications. There are also the only company that meets the projects ultra low devicedefect density requirements.The authority is FAR 13.106 (b) (1) only one source reasonably available.The Government intends to acquire a commercial item using FAR Part 12.DO Rating is DO-C9. This synopsis shall not be construed as a commitment by the Government, nor will theGovernment pay for the information solicited.Interested organizations may submit their capabilities and qualifications to perform theeffort in writing to GENIA BURTON-PENDERGAST at Rogenia.M.Burton-Penderga@nasa.gov or faxto 301-286-1720 (email preferred), not later than 4:30 p.m. Eastern Standard Time (ET) onAugust 04, 2009.Technical questions should be submitted in writing via email no later than 07/27/2009.Such capabilities/qualifications will be evaluated solely for the purpose of determiningwhether or not to conduct this procurement on a competitive basis. A determination bythe Government not to compete this proposed effort on a full and open competition basis,based upon responses to this notice, is solely within the discretion of the government.Oral communications ARE NOT acceptable in response to this notice.All responsible sources may submit an offer which shall be considered by the agency.It is the offeror's responsibility for downloading their own copy of this notice andamendments (if any).An Ombudsman has been appointed. See NASA Specific Note "B".Any referenced notes may be viewed at the following URLs linked below.
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/spg/NASA/GSFC/OPDC20220/NNG092303204L/listing.html)
- Record
- SN01880443-W 20090722/090720234904-5c2476e7f4452cc65ea5bd61f05103c2 (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
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