SOLICITATION NOTICE
59 -- SOI BONDED SINGLE-CHRYSTAL WAFERS
- Notice Date
- 1/10/2007
- Notice Type
- Solicitation Notice
- NAICS
- 334419
— Other Electronic Component Manufacturing
- Contracting Office
- NASA/Goddard Space Flight Center, Code 210.M, Greenbelt, MD 20771
- ZIP Code
- 20771
- Solicitation Number
- NNG0783874L
- Response Due
- 1/25/2007
- Archive Date
- 1/10/2008
- Small Business Set-Aside
- N/A
- Description
- NASA/GSFC has a requirement for SOI Bonded Wafers: Item 1. Silicon on insulator wafers Wafer specifications- SOI bonded wafers Wafers shall be composed of single-crystal silicon wafers, bonded together with a silicon dioxide interface. The silicon dioxide shall be thermally grown and defect free. The top layer silicon (henceforth referred to as the device wafer) shall be of excellent quality single-crystal silicon and shall be free of gross defects as observed by the XTEM method. The seed layer of the device wafers shall be fabricated via the Smart-Cut method, utilizing ion implantation and bonding. Note: Grinding and etch-back shall not be considered acceptable methods of device layer production. In addition SIMOX wafers shall not be accepted. The front surface of the device wafer shall be polished to semiconductor standards according to the specifications that follow. The bottom layer silicon wafer (henceforth referred to as the handle wafer) shall be of excellent quality single-crystal silicon and shall be free of gross defects as observed by the XTEM method. Specifications: 1.1 Device wafer: a) Diameter: 100.00 mm +/- 0.50 mm b) Total thickness 1.40 ? 0.029 microns composed of 0.34 microns SOI plus 1.06 microns epitaxy, c) Within wafer total thickness variation: 0.029 measured at 400 points with 5 mm edge exclusion d) Wafer-to-wafer total thickness variation: 0.05 microns measured at 400 points with 5 mm edge exclusion e) Crystal orient. <100> ?0.50 degrees f) Dopant Boron g) Resistivity 14-22 ohm-cm, 15% ctr/10mm from edge h) Etch pit density <2/square cm (HF), < 1E4/sq. (Seeco Method) i) Free of microbubbles and voids. 6 mm exclusion from edge j) Polished 1.2 Handle wafer: a) Diameter: 100mm ?0.50mm b) Thickness: 525 microns +/- 10 microns c) Within wafer total thickness variation: 10 microns (Maximum-Minimum) d) Wafer-to-wafer total thickness variation: 10 microns (Maximum-Minimum) e) Crystal orient. <100> ?0.50 degrees f) Crystal orientation with respect to device wafer: ?0.25 degrees g) Flats: SEMI standard <110> +/- .50 degrees, 30-35 mm h) Dopant : Boron i) Resistivity: 14-22 ohm-cm , 10% ctr/10mm from edge j) Backside: Wet sandblast 1.3 Buried Silicon dioxide layer1 (joining device wafer and spacer wafer): a) Thickness: 1.0 microns ?0.01 microns b) Pin hole density <0.2/cm^2 Wafers are to be appropriately double-wrapped for class-10, clean-room use. Item #2: Shipping NASA/GSFC intends to purchase 100 of the items from SOITEC USA, INC., Peabody, MA. The results of market research identified SOITEC USA as the only company that can provide the required specifications, especially the critical requirement for thickness uniformity for SOI wafers. The Government intends to acquire a commercial item using FAR Part 12. This procurement will be processed using the procedures as set forth in FAR part 13 Simplified Acquisitions Procedures. DO Ratin is DO-C9. This synopsis shall not be construed as a commitment by the Government, nor will the Government pay for the information solicited. Interested organizations may submit their capabilities and qualifications to perform the effort in writing to the identified point of contact not later than 4:30 p.m. local time on January 25, 2007. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether or not to conduct this procurement on a competitive basis. A determination by the Government not to compete this proposed effort on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the government. Oral communications are not acceptable in response to this notice. All responsible sources may submit capability statements which shall be considered by the agency. An Ombudsman has been appointed. See NASA Specific Note "B". Any questions should be directed to the attention of Nadja Hardy via e-mail at nadja.hardy@nasa.gov or via facsimile at (301) 286-9159 by January 25, 2007. For technical questions please contact Nadja Hardy at (301) 286-3462 no later than 4:30 p.m. on January 19, 2007.
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- Record
- SN01209044-W 20070112/070110221351 (fbodaily.com)
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