MODIFICATION
99 -- ULTRA THIN SILICON ON INSULATOR WAFERS
- Notice Date
- 3/22/2006
- Notice Type
- Modification
- NAICS
- 334419
— Other Electronic Component Manufacturing
- Contracting Office
- NASA/Goddard Space Flight Center, Code 210.M, Greenbelt, MD 20771
- ZIP Code
- 20771
- Solicitation Number
- NNG06146644L
- Response Due
- 3/24/2006
- Archive Date
- 3/22/2007
- Description
- This is a modification to the synopsis entitled Ultra Thin Silicon On Insulator Wafers which was posted on March 7, 2006. The purpose of this modification is to post Questions and Answers. You are notified that the following apply. 1. Names of countries that will be eligible to partipate in this tender: USA/The Buy American Act Applies 2. Estimated budget for this purchase. We are not at liberty to disclose. 3. Any extension for bidder's deadline? No, there will be no extension. 4. Any addendum or Pre Bid meeting minutes? No, this procurement is being handled using Simplified Acquisition Procedures, therefore, there are no pre-bid meetings. 5. Specifications: 1)Device Wafer: a) Diameter: 100.00 +/- 0.50 mm, b)Total thickness1.44 +/- 0.029 microns composed of 0.34 microns SOI plus 1.1 micorns cpitaxy, c)within wafer total thickness variation: 0.029 measure at 400 points with 5mm edge exclusion, d)wafer-to-wafer total thickness variation: 0.05 microns measured on 400 point with 5mm edge exclusion, e)crystal orientation: <100>+/-0.50 degrees, f) dopont: boron, g) Resistivity: 14-22 ohm-cm, 15% ctr/10nm from edge, h) Etch pit density <2 square cm (HF), <1c4/sq/Seeco method), i) free of microbubbles and voids. 6 mm exclusion, j)Polished. 1.2 Handle wafer a) Diameter 100mm +/-0.50mm, b)Thickness: 450 microns +/-10microns, c)Within wafer total thickness variation: 5 microns (maximum-minimum), d) wafer-to-wafer total thickness variation: 10 microns (maximum-minimum), e) crystal orientation: <100> +/- 0.50 degrees, f) crystal orientation with respect to device wafer +/-0.25 degrees, g) flats: SEMI standard <110>+/-0.50 degrees, 30-35mm, h) Dopant: Boron, i)Resistivity: 14-22 ohm-cm, 10% ctr/10mm from edge, j) polished. 1.3 Buried Silicon dioxide layer (joining device wafer and handle wafer), a) Thickness: 0.04 microns +/-0.0075 microns, b) pinhole density<0.2/cm^2 Wafers are to be approximately double-wrapped for class-10 clean-room use. 2.1 device wafer: k) diameter: 100.00 mm +/-0.50mm, l) total thickness 1.1 +/-0.029 microns composed of 0.34 microns SOI plus 0.76 microns epitaxy, m) within wafer total thickness variation: 0.029 measure at 400 points with 5mm edge exclusion, n) wafer-to-wafer total thickness variation: 0.05 microns measured at 400 point with 5mm edge exclusion, o) Crystal orientation <100> +/-0.50 degrees, p) Dopant: Boron, q) Resistivity: 14-22 ohm-cm, 15%ctr/10mm from edge, r) Etch pit density <2 square cm(HF), <1e4/sq/(Seeco method), s) Free of microbubbles and voids. 6mm exclusions, t) Polished 2.2 Handle wafer k) Diameter: 100mm +/- 0.50 mm, l) Thickness: 450 microns +/-10 microns, m) within wafer total thickness variation: 5 microns (maximum-minimum), n)wafer-to-wafer total thickness variation: 10 microns (maximum-minimum), o) crystal orientation <100> +/- 0.50 degrees, p) crystal orientation with respect to device wafer: +/-0.25 degrees, q) flats: SEMI standard <110>+/-0.50 degrees. 30-35mm, r) Dopant: Boron, s) Resistivity 14-22 ohm-cm. 10% ctr/10mm from edge, t) Polish: double side polish 2.3 Buried silicon dioxide layer (joining device wafer and handle wafer), c) thickness: 0.04 microns +/-0.0075 microns, d) pinhole density <0.2cm^2 Wafers are to be appropriately double-wrapped for class-10 clean-room use. The due date for responses is not extended. Documents related to this procurement will be available over the Internet. These documents will reside on a World Wide Web (WWW) server, which may be accessed using a WWW browser application. The Internet site, or URL, for the NASA/GSFC Business Opportunities home page is http://prod.nais.nasa.gov/cgi-bin/eps/bizops.cgi?gr=D&pin=51 Offerors are responsible for monitoring this site for the release of the solicitation and any amendments. Potential offerors are responsible for downloading their own copy of the solicitation and amendments (if any). [INSERT ANY APPLICABLE NOTES]
- Web Link
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(http://prod.nais.nasa.gov/cgi-bin/eps/bizops.cgi?gr=D&pin=51#119310)
- Record
- SN01012804-W 20060324/060322213106 (fbodaily.com)
- Source
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