Loren Data's SAM Daily™

FBO DAILY ISSUE OF JULY 09, 2004 FBO #0956
SOLICITATION NOTICE

66 -- Ion Beam Etch/Deposition System

Notice Date

7/7/2004
 

Notice Type

Solicitation Notice
 

NAICS

334513 — Instruments and Related Products Manufacturing for Measuring, Displaying, and Controlling Industrial Process Variables
 

Contracting Office

Department of Commerce, National Oceanic and Atmospheric Administration (NOAA), Mountain Administrative Support Center, 325 Broadway - MC3, Boulder, CO, 80305-3328
 

ZIP Code

80305-3328
 

Solicitation Number

RA1341-04-RP-4025
 

Response Due

8/16/2004
 

Archive Date

9/30/2004
 

Point of Contact

Jan Clark, Contract Specialist, Phone (303) 497-6320, Fax (303) 497-3163, - Rhonda Nelson, Procurement Technician, Phone (303) 497-3487, Fax (303) 497-3163,
 

E-Mail Address

jan.clark@noaa.gov, Rhonda.Nelson@noaa.gov
 

Description

This is a combined synopsis/solicitation for a commercial item prepared in accordance with the format in FAR Subpart 12.6, as supplemented by additional information included in this notice and in accordance with the simplified acquisition procedures authorized in FAR Part 13. This announcement constitutes the only solicitation; proposals are being requested and a written solicitation will NOT be issued. The solicitation number is RA1341-04-RP-4025 and issued as a request for proposal (RFP). The solicitation document and incorporated provisions and clauses are those in effect through Federal Acquisition Circular 2001-24. The NAICS Code is 334513. Any amendment(s) hereto will only be published in the FedBizOpps. The National Institute of Standards and Technology ( NIST) requires a Ion Beam Etch/Deposition tool to be used in its class 100 clean room to deposit and etch a variety of metallic films including alloys of Ti, Au, Cu, Ni, Fe, and Co. The system will be used to make magnetic device structures on 76 mm wafers for data storage and low field sensor applications. The system will be used by a wide variety of researchers ranging from students to senior scientists and must be easy to use and robust. SPECIFICATIONS ARE AS FOLLOWS: GENERAL INFORMATION: The system shall be Class 100 clean-room compatible, designed to sit entirely within the clean room. The system shall be capable of uniform etching of metal and oxide films with etch rates varying between 0.1 and 1.0 nm/s. The system shall be capable of ion-beam deposition of metallic and oxide films at similar rates. The system shall be capable of operating with a load-lock, although the load-lock option should be quoted separately. The system will be used in a research environment with low throughput. 1. VACUUM SYSTEM AND PUMPING SYSTEM: 1.1 The chamber shall have a diameter of not less than 0.35 m and no greater than 0.60 m and be made from either AISI type 304 or 316 stainless steel. The chamber needs to have a pumping port on the bottom with a standard 203 mm outside diameter knife edge ("Conflat") flange. 1.2 The system shall have easy front access with a door sealed with a pair of differentially pumped O-ring seals. 1.3 The system shall come with a magnetically levitated combination turbomolecular-molecular drag pump with a Nitrogen pumping speed >= 800 l/s. The turbomolecular-molecular drag pump should be mounted directly on the chamber on a 203 mm knife-edge flange without any gate valve or conductance controller. The turbomolecular-molecular drag pump should be backed with a scroll pump with a Nitrogen pumping speed > 13.0 m3/hr and a base pressure of < 6 Pa. The system base pressure must be less than 6.6 x 10-6 Pa (5 x 10-8 torr). 1.4 The system shall be set up for load-lock operation capable of transferring 76 mm diameter wafers with thicknesses between 100 micrometer and 600 micrometer. The loadlock shall be pumped out to a pressure of less than 6 Pa with the scroll pump used to back the main turbomolecular-molecular drag pump. The load-lock option should be quoted separately. 1.5 The system shall include a water-cooled stage that is capable of rotating (0-15 RPM) and tilting (0-90 degrees). The stage shall be capable of tilting to face either the etch or deposition station. The stage shall contain a magnet assembly that provides a magnetic field in the plane of the sample with a magnitude of 10 mTesla and 10 % uniformity of the field magnitude and angle over the center 50 mm diameter of the wafer. 1.6 The system shall contain shielding to prevent cross contamination of the ion sources, sputter targets, and gauging. 1.7 The system shall include two 20 sccm gas flow controllers, for Ar and O2, provided with readout and flow control (no pressure control is required). 1.8 The system shall be constructed on a class 100 cleanroom compatible frame with a footprint no greater than 1.07 m by 1.8 m. The system height shall be less than 2.44 m. This requirement does not include space for gas bottles, roughing pumps, and other utilities that can be installed in a utility chase behind the system. 1.9 The system shall include vacuum gauging to monitor and display the system base pressure, the pressure during sputtering and etching, and the pressure during venting. 2. ION BEAM ETCH: 2.1 The system shall include a collimated ion source and power supply capable of etching thin films with better than 5 % uniformity across a 76 mm wafer. The maximum etch rate for Copper films shall be greater than 0.5 nm/s. 2.2 The angle of incidence of the ion beam shall be adjustable from 0-90 degrees under computer control. 2.3 A shutter and an ion beam current monitor shall be included in the system. 3. ION BEAM DEPOSITION: 3.1 The system shall contain a focused ion source capable of depositing off of 100 mm circular targets with minimal ion spray outside the targets. The uniformity of the deposited film thickness across a 76 mm wafer must be less than 10%. The maximum deposition rate for Copper must be greater than 0.5 nm/s. 3.2 The system shall contain a target carousel that will hold a minimum of three 100 mm targets that will allow sputtering from any one of the targets. The targets must be changeable under computer control. The system shall include all necessary ion beam power supplies and water-cooling circuits. 4. SYSTEM SOFTWARE AND COMPUTER: 4.1. The system shall come with a PC-compatible computer with a processor speed greater than 1 GHz. The system shall include software to allow easy set up of gas flows, setup of both ion beam sources, control of etch and deposition time, and variation of the etch angle during the etch. 5. UTILITIES: 5.1 The system electrical requirements shall be either standard 120 V AC or 208V 3 phase AC. 5.2 The system shall come with standard connectors for gas, cooling water, and compressed air (if required). 6. DEMONSTRATION OF PRIOR DELIVERY AND SUCCESSFUL OPERATION OF SIMILAR SYSTEMS: 6. 1 NIST requires at least three references to establish the previous delivery and successful operation of systems with similar capability to the one requested. The references will be asked the following questions: a) Did your system meet performance specifications? b) Did your system meet delivery specifications? c). Is the system easy to use without substantial training? d) Was the system capable of making high-quality films without contamination? e) Have there been any component failures or downtime other than due to routine maintenance? 6.2 Information should be provided demonstrating the performance of the proposed system. 7. SAFETY: 7.1 The system shall include all necessary interlocks on high-voltage supplies and vacuum systems to insure that the system presents no safety hazards. 7.2 The system shall meet OSHA standards for operator safety and SEMI standards for environmental safety. 8. INSTALLATION, DELIVERY, DOCUMENTATION AND WARRANTY: 8.1 The system shall come with complete documentation, installation instructions, system drawings, and utility connections. 8.2 The system will be installed by NIST personnel according to the directions provided. 8.3 The system shall include a warranty for all parts and labor for at least 1 year. 8.4 Delivery shall be not later than 120 days following signature by the Government of contract award at the Department of Commerce/ Boulder Laboratories, Building 1, 325 Broadway, Boulder, CO 80305. 9. ACCEPTANCE: Prior to shipment the Contractor shall ensure that the system has passed all tests specified as follows: 9.1 The system must achieve a base pressure of less than 6.6 x 10-6 Pa (5 x 10-8 torr) before being shipped and after installation at NIST. 9.2 The system must demonstrate etching of a Copper film at etch rates greater than 0.5 nm/s with a uniformity of better than 5% across a 76 mm wafer before being shipped and after installation at NIST. 9.3 The system must demonstrate deposition of a Copper film at deposition rates greater than 0.5 nm/s with a uniformity of better than 10% across a 76 mm wafer before being shipped and after installation at NIST. In the event that the system fails the tests performed at the Government site after installation, the parties will attempt by mutual agreement to negotiate an appropriate period of time for the Contractor to repair the failures. The Contractor shall repair the failures on Government premises; however, the Government may unilaterally decide to return the equipment at no cost to the Government for repair at the Contractor's facility or for rejection of the system. SELECTION CRITERIA: 1. Hardware specifications (50%) The score will be based on (a) how the proposed hardware meets the listed specifications (20%), (b) the quality of the system design (15%), (c) the age of the components (10%), and (d) the information provided by the offeror demonstrating that the proposed system meets the requirements (5%). 2. Experience and past performance (40%) - The score will be based on (a) number of similar systems delivered (20%), and (b) the satisfaction of the customers using the systems (20%). Previous customers must indicate that the system they received met specifications, was delivered on time, did not have many unexpected failures, and was easy to use. 3. Documentation and Warranty (10%). The score will be based on (a) the quality and completeness of the documentation provided (5%) in the proposal, and (b) the warranty provided by the offeror (5%). 4. Price. Criteria 1, 2, and 3, when combined, are more important than Criteria 4, Price. Forms and clauses stipulated herein may be downloaded via the internet at the following address: http://www.arnet.gov/far/. Interested parties are responsible for accessing and downloading documents and forms from that (or any other) site. Firms without access to the internet may call 303/497-5588 and request that copies of the clauses, provisions, and/or forms be either mailed or faxed to them. Offers shall include a properly completed and signed Standard Form 1449. The firm fixed-price for CLIN 0001 shall include the price for the ION Beam Etch/Deposition System, including shipping (FOB Destination) and warranty. CLIN 0002 is an optional item for the price of the Load-lock operation. The following provisions and clauses are hereby incorporated by reference: FAR 52.212-1 (JAN 2004) (provision) Instructions to Offerors - Commercial Items // FAR 52.212-2 (JAN 1999) (provision) Evaluation - Commercial Items// FAR 52.212-3 (MAY 2004) (provision) Offeror Representations and Certifications - Commercial Items NOTE: Offerors shall include with their offers a completed copy of the provision at FAR 52.212-3. // FAR 52.212-4 (OCT 2003) (clause) Contract Terms and Conditions - Commercial Items, // FAR 52.212-5 (JUN 2004) (clause) Contract Terms and Conditions Required to Implement Statutes or Executive Orders - Commercial Items including the following additional FAR clauses referenced in FAR 52.212-5, subparagraphs (b) (1), (14), (15), (16), (17), (18), (19), (20), (24), (25), (26), and (30). Addendum 52.217-7 (clause) Option for Increased Quantity Separately Priced Line Item (MAR 1989). Award will be made to the offeror presenting the best overall value to the Government. Offers shall be evaluated in accordance with the Test Program procedures at FAR 13.500. The Government reserves the right to make award without discussions. For further information, please contact Jan Clark (303/497-6320). Offers are due at 3:00 P.M. on August 16, 2004 and shall be mailed to: BID DEPOSITORY/ DOC, NOAA, MASC, MC3, Acquisition Management Division, DSRC Room 33-GB506A, 325 Broadway, Boulder, CO 80305-3328. ALL hand-carried offers must be scanned in Building 22 at 325 Broadway in Boulder, Colorado prior to being delivered to the David Skaggs Research Center., Room 33-GB506A, 325 Broadway, Boulder, CO. If they are not scanned, they may be refused. E-MAIL OR FACSIMILE OFFERS WILL NOT BE ACCEPTED. See Numbered Note 12. EMAILADD: MASC.Solicitation@noaa.gov EMAILDESC: NOAA, MASC Acquisition Management Division
 

Place of Performance

Address: 325 Broadway, Boulder, CO

Zip Code: 80305-3328

Country: US
 

Record

SN00616054-W 20040709/040707211729 (fbodaily.com)
 

Source

FedBizOpps.gov Link to This Notice
(may not be valid after Archive Date)

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