SOLICITATION NOTICE
60 -- ETCHING OF SILICON CARBIDE WAFERS.
- Notice Date
- 6/20/2002
- Notice Type
- Solicitation Notice
- Contracting Office
- NASA/Glenn Research Center, 21000 Brookpark Road, Cleveland, OH 44135
- ZIP Code
- 44135
- Solicitation Number
- RFQ-3-202739
- Response Due
- 6/27/2002
- Archive Date
- 6/20/2003
- Point of Contact
- Dennis D. Pehotsky, Purchasing Agent, Phone (216) 433-2757, Fax (216) 433-2480, Email Dennis.D.Pehotsky@grc.nasa.gov
- E-Mail Address
-
Email your questions to Dennis D. Pehotsky
(Dennis.D.Pehotsky@grc.nasa.gov)
- Description
- NASA/GRC plans to issue a Request for Quotation (RFQ) for: SPECIFICATIONS FOR SILICON CARBIDE WAFERS: PATTERN ETCHING SERVICES PER SPECIFICATIONS AS LISTED BELOW: Specification #1 for Wafers Delivered Under Line Item #1 (5 Each) Each silicon carbide wafer for Line Item #1 shall meet the following specifications: ? Shall be a single crystal of the 6H polytype with the silicon face polished and the carbon face unpolished. ? Shall be round with a diameter of 50 mm ? 0.38 mm, and a thickness of 0.3 mm ? 0.1 mm. ? On the back of each wafer (the unpolished side), identifying numbers/letters shall be produced by a laser evaporation process near the primary wafer flat. ? Shall be aluminum doped with a p-type resistivity less than 3 ohm-cm. ? Shall include a flat along the edge with an orientation of {1010}?10?. ? Shall be Cree "production grade" (i.e. at least 70% usable surface), or better. ? Shall conform to all Cree research standard specifications for standard silicon carbide epitaxial wafer, July 2001 Revision, as contained in the document at http://www.cree.com/ftp/pub/sicctlg_read_new.pdf. ? Orientation of the front face shall be less than 0.5?off the (0001) plane. ? Using a 5-inch quartz photolithographic mask supplied by NASA, each wafer shall have a pattern of trenches (to form arrays of isolated mesas) etched into the polished silicon face surface to a depth of 10 ?m ? 2 ?m with lateral edge roughness and pattern inaccuracy not to exceed 5 ?m. ? All 5 wafers for this line item shall be cut from the same 4H-SiC crystal. Specification #2 for Wafers Delivered Under Line Item #3 (3 Each) Each silicon carbide wafer for Line Item #3 shall meet the following specifications: ? Shall be a single crystal of the 4H polytype with the silicon face polished and the carbon face unpolished. ? Shall be round with a diameter of 50 mm ? 0.38 mm, and a thickness of 0.3 mm ? 0.1 mm. ? On the back of each wafer (the unpolished side), identifying numbers/letters shall be produced by a laser evaporation process near the primary wafer flat. ? Shall be aluminum doped with a p-type resistivity less than 3 ohm-cm. ? Shall include a flat along the edge with an orientation of {1010}?10?. ? Shall be Cree "production grade" (i.e. at least 90% usable surface), or better. ? Shall conform to all Cree research standard specifications for standard silicon carbide epitaxial wafer, July 2001 Revision, as contained in the document at http://www.cree.com/ftp/pub/sicctlg_read_new.pdf. ? Orientation of the front face shall be less than 0.5?off the (0001) plane. ? Using a 5-inch quartz photolithographic mask supplied by NASA, each wafer shall have a pattern of trenches (to form arrays of isolated mesas) etched into the polished silicon face surface to a depth of 10 ?m ? 2 ?m with lateral edge roughness and pattern inaccuracy not to exceed 5 ?m. ? All 3 wafers for this line item shall be cut from the same 4H-SiC crystal. Specification #3 for Wafers Delivered Under Line Item #4 (12 Each) Each silicon carbide wafer for Line Item #4 shall meet the following specifications: ? Shall be a single crystal of the 6H polytype with the silicon face polished and the carbon face unpolished. ? Shall be round with a diameter of 50 mm ? 0.38 mm, and a thickness of 0.3 mm ? 0.1 mm. ? On the back of each wafer (the unpolished side), identifying numbers/letters shall be produced by a laser evaporation process near the primary wafer flat. ? Shall be nitrogen doped with an n-type resistivity less than 0.2 ohm-cm. ? Shall include a flat along the edge with an orientation of {1010}?10?. ? Shall be Cree "production grade" (i.e. at least 90% usable surface), or better. ? Shall conform to all Cree research standard specifications for standard silicon carbide epitaxial wafer, July 2001 Revision, as contained in the document at http://www.cree.com/ftp/pub/sicctlg_read_new.pdf. ? Orientation of the front face shall be less than 0.5?off the (0001) plane. ? Using a 5-inch quartz photolithographic mask supplied by NASA, the wafer shall have a pattern of trenches (to form arrays of isolated mesas) etched into the polished silicon face surface with lateral edge roughness and pattern inaccuracy not to exceed 5 ?m. The trenches for 8 of these wafers shall be etched to a depth of 10 ?m ? 2 ?m, while the trenches for the other 4 wafers shall be etched to a depth of 20 ? 2 ?m. ? 4 of the wafers for this line item shall be cut from the same 6H-SiC crystal #1, 4 of the wafers for this line item shall be cut from another 6H-SiC crystal #2, and 4 of the wafers for this line item shall be cut from another 6H-SiC crystal #3. Specification #4 for Wafers Delivered Under Line Item #5 (4 Each) Each silicon carbide wafer for Line Item #4 shall meet the following specifications: ? Shall be a single crystal of the 4H polytype with the silicon face polished and the carbon face unpolished. ? Shall be round with a diameter of 50 mm ? 0.38 mm, and a thickness of 0.3 mm ? 0.1 mm. ? On the back of each wafer (the unpolished side), identifying numbers/letters shall be produced by a laser evaporation process near the primary wafer flat. ? Shall be nitrogen doped with an n-type resistivity less than 0.1 ohm-cm. ? Shall include a flat along the edge with an orientation of {1010}?10?. ? Shall be Cree "production grade" (i.e. at least 90% usable surface), or better. ? Shall conform to all Cree research standard specifications for standard silicon carbide epitaxial wafer, July 2001 Revision, as contained in the document at http://www.cree.com/ftp/pub/sicctlg_read_new.pdf. ? Orientation of the front face shall be less than 0.5?off the (0001) plane. ? Using a 5-inch quartz photolithographic mask supplied by NASA, each wafer shall have a pattern of trenches (to form arrays of isolated mesas) etched into the polished silicon face surface to a depth of 20 ? 2 ?m with lateral edge roughness and pattern inaccuracy not to exceed 5 ?m. ? Each of the wafers for this line item shall be cut from a different 4H-SiC crystal. Specification #5 for Wafers Delivered Under Line Item #6 (2 Each) Each silicon carbide wafer for Line Item #4 shall meet the following specifications: ? Shall be a single crystal of the 6H polytype with the carbon face polished and the silicon face unpolished. ? Shall be round with a diameter of 50 mm ? 0.38 mm, and a thickness of 0.3 mm ? 0.1 mm. ? On the back of each wafer (the unpolished side), identifying numbers/letters shall be produced by a laser evaporation process near the primary wafer flat. ? Shall be nitrogen doped with an n-type resistivity less than 0.2 ohm-cm. ? Shall include a flat along the edge with an orientation of {1010}?10?. ? Shall be Cree "production grade" (i.e. at least 90% usable surface), or better. ? Shall conform to all Cree research standard specifications for standard silicon carbide epitaxial wafer, July 2001 Revision, as contained in the document at http://www.cree.com/ftp/pub/sicctlg_read_new.pdf. ? Orientation of the front face shall be less than 0.5?off the (0001) plane. ? Using a 5-inch quartz photolithographic mask supplied by NASA, each wafer shall have a pattern of trenches (to form arrays of isolated mesas) etched into the polished carbon face surface to a depth of 0 ? 2 ?m with lateral edge roughness and pattern inaccuracy not to exceed 5 ?m. Specification #6 for Wafers Delivered Under Line Item #7 (2 Each) Each silicon carbide wafer for Line Item #4 shall meet the following specifications: ? Shall be a single crystal of the 4H polytype with the carbon face polished and the silicon face unpolished. ? Shall be round with a diameter of 50 mm ? 0.38 mm, and a thickness of 0.3 mm ? 0.1 mm. ? On the back of each wafer (the unpolished side), identifying numbers/letters shall be produced by a laser evaporation process near the primary wafer flat. ? Shall be nitrogen doped with an n-type resistivity less than 0.1 ohm-cm. ? Shall include a flat along the edge with an orientation of {1010}?10?. ? Shall be Cree "production grade" (i.e. at least 90% usable surface), or better. ? Shall conform to all Cree research standard specifications for standard silicon carbide epitaxial wafer, July 2001 Revision, as contained in the document at http://www.cree.com/ftp/pub/sicctlg_read_new.pdf. ? Orientation of the front face shall be less than 0.5?off the (0001) plane. ? Using a 5-inch quartz photolithographic mask supplied by NASA, each wafer shall have a pattern of trenches (to form arrays of isolated mesas) etched into the polished carbon face surface to a depth of 0 ? 2 ?m with lateral edge roughness and pattern inaccuracy not to exceed 5 ?m. This procurement is being conducted under the Simplified Acquisition Procedures (SAP). NASA/GRC intends to purchase the items from Cree Inc., 4600 Silicon Drive, Durham, NC 27703; based on (FAR 13.602,4.8GRC-P3.9.2.2); because of the following paragraph: The NASA Glenn Research Center at Lewis Field has been developing silicon carbide (SiC) as a high temperature semiconductor material for many years. The requestor on this PR has personally published more than 50 papers related to the growth and fabrication of SiC crystals and devices, and is considered an expert in the field. Documentation to back up this claim can be provided if requested. The requestor is aware of the few institutions throughout the world working on SiC, and currently, there is only one commercial supplier of large SiC wafers with mesas patterned by photolithographically defined trenches at least 5 ?m in depth to a lateral accuracy of 5 ?m or better, and that supplier is Cree, Inc. The Government intends to acquire a commercial item using FAR Part 12. Interested organizations may submit their capabilities and qualifications to perform the effort in writing to the identified point of contact not later than 4:30 p.m. local time on 6-27-02 to the NASA Glenn Research Center, Attn: Dennis D. Pehotsky, 21000 Brookpark Rd., Cleveland, OH 44135; or by faxing them to (216)-433-2480. Sorry,due to tight time restraints, we cannot accept late quotes. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether or not to conduct this procurement on a competitive basis. A determination by the Government not to compete this proposed effort on a full and open competition basis, based upon responses to this notice is solely within the discretion of the government. Oral communications are not acceptable in response to this notice. All responsible sources may submit an offer which shall be considered by the agency. An Ombudsman has been appointed. See NASA Specific Note "B". Any referenced notes can be viewed at the following URL: http://genesis.gsfc.nasa.gov/nasanote.html
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- Record
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